Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2018, Vol. 27 Issue (4): 048502    DOI: 10.1088/1674-1056/27/4/048502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator
Xue Chen(陈雪)1, Zhi-Gang Wang(汪志刚)1, Xi Wang(王喜)1, James B Kuo2
1. School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China;
2. “National” Taiwan University, Taipei, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn