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CN 11-5639/O4
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Other articles related with "77.55.df":
98201 Jianhui Bao, Ke Tao, Yiren Lin, Rui Jia, Aimin Liu
  The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells
    Chin. Phys. B   2019 Vol.28 (9): 98201-098201 [Abstract] (107) [HTML 1 KB] [PDF 567 KB] (77)
48103 Yu Zhang, Jun Xu, Da-Yu Zhou, Hang-Hang Wang, Wen-Qi Lu, Chi-Kyu Choi
  Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO2 films
    Chin. Phys. B   2018 Vol.27 (4): 48103-048103 [Abstract] (128) [HTML 1 KB] [PDF 1218 KB] (158)
48502 Xue Chen, Zhi-Gang Wang, Xi Wang, James B Kuo
  Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator
    Chin. Phys. B   2018 Vol.27 (4): 48502-048502 [Abstract] (230) [HTML 1 KB] [PDF 1087 KB] (137)
108503 Yan Zeng, Xiao-Jin Li, Jian Qing, Ya-Bin Sun, Yan-Ling Shi, Ao Guo, Shao-Jian Hu
  Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
    Chin. Phys. B   2017 Vol.26 (10): 108503-108503 [Abstract] (143) [HTML 1 KB] [PDF 701 KB] (179)
87802 Shuai Jiang, Rui Jia, Ke Tao, Caixia Hou, Hengchao Sun, Zhiyong Yu, Yongtao Li
  Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
    Chin. Phys. B   2017 Vol.26 (8): 87802-087802 [Abstract] (161) [HTML 1 KB] [PDF 1007 KB] (290)
77303 Fang-Lin Zheng, Cheng-Sheng Liu, Jia-Qi Ren, Yan-Ling Shi, Ya-Bin Sun, Xiao-Jin Li
  Analytical capacitance model for 14 nm FinFET considering dual-k spacer
    Chin. Phys. B   2017 Vol.26 (7): 77303-077303 [Abstract] (190) [HTML 1 KB] [PDF 1849 KB] (410)
17701 Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才)
  A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
    Chin. Phys. B   2017 Vol.26 (1): 17701-017701 [Abstract] (281) [HTML 1 KB] [PDF 1290 KB] (412)
106701 Xiao-Min Gu, Wei Wang, Guo-Tai Zhou, Kai-Ge Gao, Hong-Ling Cai, Feng-Ming Zhang, Xiao-Shan Wu
  Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films
    Chin. Phys. B   2016 Vol.25 (10): 106701-106701 [Abstract] (213) [HTML 1 KB] [PDF 1280 KB] (253)
47305 Fan-Yu Liu, Heng-Zhu Liu, Bi-Wei Liu, Yu-Feng Guo
  An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect
    Chin. Phys. B   2016 Vol.25 (4): 47305-047305 [Abstract] (176) [HTML 1 KB] [PDF 663 KB] (460)
27701 Zhi Jiang, Yi-Qi Zhuang, Cong Li, Ping Wang, Yu-Qi Liu
  Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
    Chin. Phys. B   2016 Vol.25 (2): 27701-027701 [Abstract] (243) [HTML 1 KB] [PDF 356 KB] (402)
67701 Lin Meng, An Xia, Li Ming, Yun Quan-Xin, Li Min, Li Zhi-Qiang, Liu Peng-Qiang, Zhang Xing, Huang Ru
  Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application
    Chin. Phys. B   2014 Vol.23 (6): 67701-067701 [Abstract] (140) [HTML 1 KB] [PDF 410 KB] (668)
97701 Tang Zhen-Jie, Li Rong, Yin Jiang
  Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer
    Chin. Phys. B   2013 Vol.22 (9): 97701-097701 [Abstract] (315) [HTML 1 KB] [PDF 379 KB] (442)
78501 Zhai Ya-Hong, Li Wei, Li Ping, Li Jun-Hong, Hu Bin, Huo Wei-Rong, Fan Xue, Wang Gang
  Lead zirconate titanate behaviors in LDMOS
    Chin. Phys. B   2013 Vol.22 (7): 78501-078501 [Abstract] (225) [HTML 1 KB] [PDF 439 KB] (427)
67702 Tang Zhen-Jie, Li Rong, Yin Jiang
  The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory
    Chin. Phys. B   2013 Vol.22 (6): 67702-067702 [Abstract] (291) [HTML 1 KB] [PDF 578 KB] (409)
47701 Zheng Zhi, Li Wei, Li Ping
  Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect
    Chin. Phys. B   2013 Vol.22 (4): 47701-047701 [Abstract] (323) [HTML 1 KB] [PDF 967 KB] (667)
47701 Zhen-Jie Tang, Rong Li, Xi-Wei Zhang
  Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
    Chin. Phys. B   2020 Vol.29 (4): 47701-047701 [Abstract] (1) [HTML 0 KB] [PDF 1085 KB] (1)
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