Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (8): 087304    DOI: 10.1088/1674-1056/26/8/087304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
Yanrong Wang(王艳蓉)1,2,3, Hong Yang(杨红)1,3, Hao Xu(徐昊)1,3, Weichun Luo(罗维春)1,3, Luwei Qi(祁路伟)1,3, Shuxiang Zhang(张淑祥)1,3, Wenwu Wang(王文武)1,3, Jiang Yan(闫江)2, Huilong Zhu(朱慧珑)1,3, Chao Zhao(赵超)1,3, Dapeng Chen(陈大鹏)1,3, Tianchun Ye(叶甜春)1,3
1 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 North China University of Technology, Beijing 100144, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

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