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CN 11-5639/O4
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Other articles related with "77.55.D-":
127703 Lin Zhou, Lu Liu, Yu-Heng Deng, Chun-Xia Li, Jing-Ping Xu
  Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content
    Chin. Phys. B   2019 Vol.28 (12): 127703-127703 [Abstract] (55) [HTML 1 KB] [PDF 1950 KB] (38)
78503 Tong Zhang, Taofei Pu, Tian Xie, Liuan Li, Yuyu Bu, Xiao Wang, Jin-Ping Ao
  Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2018 Vol.27 (7): 78503-078503 [Abstract] (246) [HTML 1 KB] [PDF 1160 KB] (115)
87304 Yanrong Wang, Hong Yang, Hao Xu, Weichun Luo, Luwei Qi, Shuxiang Zhang, Wenwu Wang, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye
  Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
    Chin. Phys. B   2017 Vol.26 (8): 87304-087304 [Abstract] (177) [HTML 1 KB] [PDF 1310 KB] (175)
87701 Ji-Bin Fan, Xiao-Jiao Cheng, Hong-Xia Liu, Shu-Long Wang, Li Duan
  Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy
    Chin. Phys. B   2017 Vol.26 (8): 87701-087701 [Abstract] (153) [HTML 1 KB] [PDF 1172 KB] (132)
67701 Ji-Bin Fan, Hong-Xia Liu, Li Duan, Yan Zhang, Xiao-Chen Yu
  Influences of different oxidants on characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition
    Chin. Phys. B   2017 Vol.26 (6): 67701-067701 [Abstract] (189) [HTML 1 KB] [PDF 625 KB] (235)
57702 Ji-Bin Fan, Hong-Xia Liu, Bin Sun, Li Duan, Xiao-Chen Yu
  Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment
    Chin. Phys. B   2017 Vol.26 (5): 57702-057702 [Abstract] (207) [HTML 1 KB] [PDF 1315 KB] (228)
27701 Xue-Li Ma, Hong Yang, Jin-Juan Xiang, Xiao-Lei Wang, Wen-Wu Wang, Jian-Qi Zhang, Hua-Xiang Yin, Hui-Long Zhu, Chao Zhao
  Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition
    Chin. Phys. B   2017 Vol.26 (2): 27701-027701 [Abstract] (194) [HTML 1 KB] [PDF 1226 KB] (664)
87701 Man-Hong Zhang
  Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis
    Chin. Phys. B   2016 Vol.25 (8): 87701-087701 [Abstract] (212) [HTML 1 KB] [PDF 293 KB] (434)
57702 Xiao-Hui Hou, Xue-Feng Zheng, Ao-Chen Wang, Ying-Zhe Wang, Hao-Yu Wen, Zhi-Jing Liu, Xiao-Wei Li, Yin-He Wu
  Distribution of electron traps in SiO2/HfO2 nMOSFET
    Chin. Phys. B   2016 Vol.25 (5): 57702-057702 [Abstract] (194) [HTML 1 KB] [PDF 451 KB] (245)
58106 Chen-Xi Fei, Hong-Xia Liu, Xing Wang, Dong-Dong Zhao, Shu-Long Wang, Shu-Peng Chen
  Influences of different structures on the characteristics of H2O-based and O3-based LaxAlyO films deposited by atomic layer deposition
    Chin. Phys. B   2016 Vol.25 (5): 58106-058106 [Abstract] (167) [HTML 1 KB] [PDF 385 KB] (316)
27702 Ji-Bin Fan, Xiao-Fu Ding, Hong-Xia Liu, Peng-Fei Xie, Yuan-Tao Zhang, Qing-Liang Liao
  Improvement in electrical properties of high-κfilm on Ge substrate by an improved stress relieved pre-oxide method
    Chin. Phys. B   2016 Vol.25 (2): 27702-027702 [Abstract] (157) [HTML 1 KB] [PDF 688 KB] (256)
117306 Wang Yan-Rong, Yang Hong, Xu Hao, Wang Xiao-Lei, Luo Wei-Chun, Qi Lu-Wei, Zhang Shu-Xiang, Wang Wen-Wu, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun
  Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process
    Chin. Phys. B   2015 Vol.24 (11): 117306-117306 [Abstract] (181) [HTML 1 KB] [PDF 545 KB] (295)
87304 Liu Xin-Yu, Wang Yi-Yu, Peng Zhao-Yang, Li Cheng-Zhan, Wu Jia, Bai Yun, Tang Yi-Dan, Liu Ke-An, Shen Hua-Jun
  Charge trapping behavior and its origin in Al2O3/SiC MIS system
    Chin. Phys. B   2015 Vol.24 (8): 87304-087304 [Abstract] (196) [HTML 1 KB] [PDF 520 KB] (236)
77304 Ren Shang-Qing, Yang Hong, Wang Wen-Wu, Tang Bo, Tang Zhao-Yun, Wang Xiao-Lei, Xu Hao, Luo Wei-Chun, Zhao Chao, Yan Jiang, Chen Da-Peng, Ye Tian-Chun
  Energy distribution extraction of negative charges responsible for positive bias temperature instability
    Chin. Phys. B   2015 Vol.24 (7): 77304-077304 [Abstract] (166) [HTML 1 KB] [PDF 410 KB] (229)
117702 Han Kai, Wang Xiao-Lei, Xu Yong-Gui, Yang Hong, Wang Wen-Wu
  Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack
    Chin. Phys. B   2014 Vol.23 (11): 117702-117702 [Abstract] (131) [HTML 1 KB] [PDF 435 KB] (346)
67701 Lin Meng, An Xia, Li Ming, Yun Quan-Xin, Li Min, Li Zhi-Qiang, Liu Peng-Qiang, Zhang Xing, Huang Ru
  Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application
    Chin. Phys. B   2014 Vol.23 (6): 67701-067701 [Abstract] (143) [HTML 1 KB] [PDF 410 KB] (676)
17701 Tan Zhen, Zhao Lian-Feng, Wang Jing, Xu Jun
  Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation
    Chin. Phys. B   2014 Vol.23 (1): 17701-017701 [Abstract] (97) [HTML 1 KB] [PDF 520 KB] (477)
117701 Han Kai, Wang Xiao-Lei, Yang Hong, Wang Wen-Wu
  Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric
    Chin. Phys. B   2013 Vol.22 (11): 117701-117701 [Abstract] (157) [HTML 1 KB] [PDF 250 KB] (607)
107302 Xue Bai-Qing, Wang Sheng-Kai, Han Le, Chang Hu-Dong, Sun Bing, Zhao Wei, Liu Hong-Gang
  High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation
    Chin. Phys. B   2013 Vol.22 (10): 107302-107302 [Abstract] (172) [HTML 1 KB] [PDF 502 KB] (482)
77306 Chang Hu-Dong, Sun Bing, Xue Bai-Qing, Liu Gui-Ming, Zhao Wei, Wang Sheng-Kai, Liu Hong-Gang
  Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate
    Chin. Phys. B   2013 Vol.22 (7): 77306-077306 [Abstract] (170) [HTML 1 KB] [PDF 503 KB] (564)
67701 Sun Jia-Bao, Yang Zhou-Wei, Geng Yang, Lu Hong-Liang, Wu Wang-Ran, Ye Xiang-Dong, David Zhang Wei, Shi Yi, Zhao Yi
  Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
    Chin. Phys. B   2013 Vol.22 (6): 67701-067701 [Abstract] (334) [HTML 1 KB] [PDF 333 KB] (568)
37702 Fan Ji-Bin, Liu Hong-Xia, Fei Cheng-Xi, Ma Fei, Fan Xiao-Jiao, Hao Yue
  Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on Ge substrate
    Chin. Phys. B   2013 Vol.22 (3): 37702-037702 [Abstract] (415) [HTML 0 KB] [PDF 467 KB] (497)
27702 Fan Ji-Bin, Liu Hong-Xia, Ma Fei, Zhuo Qing-Qing, Hao Yue
  Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition
    Chin. Phys. B   2013 Vol.22 (2): 27702-027702 [Abstract] (362) [HTML 1 KB] [PDF 328 KB] (818)
126102 Tian Ben-Lang, Chen Chao, Li Yan-Rong, Zhang Wan-Li, Liu Xing-Zhao
  Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
    Chin. Phys. B   2012 Vol.21 (12): 126102-126102 [Abstract] (608) [HTML 1 KB] [PDF 411 KB] (773)
87702 Fan Ji-Bin, Liu Hong-Xia, Gao Bo, Ma Fei, Zhuo Qing-Qing, Hao Yue
  Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition
    Chin. Phys. B   2012 Vol.21 (8): 87702-087702 [Abstract] (866) [HTML 1 KB] [PDF 1451 KB] (1008)
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