Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

doi:10.1088/1674-1056/ac7ccf

Abstract We investigate the effect of ozone (O₃) oxidation of silicon carbide (SiC) on the flat-band voltage (V_fb) stability of SiC metal-oxide-semiconductor (MOS) capacitors. The SiC MOS capacitors are produced by O₃ oxidation, and their V_fb stability under frequency variation, temperature variation, and bias temperature stress are evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) indicate that O₃ oxidation can adjust the element distribution near SiC/SiO₂ interface, improve SiC/SiO₂ interface morphology, and inhibit the formation of near-interface defects, respectively. In addition, we elaborate the underlying mechanism through which O₃ oxidation improves the V_fb stability of SiC MOS capacitors by using the measurement results and O₃ oxidation kinetics.

Keywords: SiC MOS capacitors ozone oxidation bias temperature instability Deal-Grove model

Received: 19 May 2022
Revised: 28 June 2022
Accepted manuscript online: 29 June 2022

PACS:	73.61.Ey	(III-V semiconductors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	81.65.Mq	(Oxidation)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61874017).

Corresponding Authors: De-Jun Wang
E-mail: dwang121@dlut.edu.cn

Cite this article:

Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君) Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors 2022 Chin. Phys. B 31 117302

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Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

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