Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (11): 118801    DOI: 10.1088/1674-1056/25/11/118801
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD
Yanjiao Shen(沈艳娇)1, Jianhui Chen(陈剑辉)1, Jing Yang(杨静)1, Bingbing Chen(陈兵兵)1, Jingwei Chen(陈静伟)1, Feng Li(李峰)2, Xiuhong Dai(代秀红)1, Haixu Liu(刘海旭)1, Ying Xu(许颖)1, Yaohua Mai(麦耀华)1
1 Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China;
2 State Key Laboratory of Photovoltaic Materials & Technology, Yingli Green Energy Holding Co., Ltd., Baoding 071051, China

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