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CN 11-5639/O4
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Other articles related with "73.40.Kp":
107301 Mei Ge, Qing Cai, Bao-Hua Zhang, Dun-Jun Chen, Li-Qun Hu, Jun-Jun Xue, Hai Lu, Rong Zhang, You-Dou Zheng
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67304 Si-Qin-Gao-Wa Bao, Xiao-Hua Ma, Wei-Wei Chen, Ling Yang, Bin Hou, Qing Zhu, Jie-Jie Zhu, Yue Hao
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58502 Guang Li, Lin-Yuan Wang, Wei-Dong Song, Jian Jiang, Xing-Jun Luo, Jia-Qi Guo, Long-Fei He, Kang Zhang, Qi-Bao Wu, Shu-Ti Li
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    Chin. Phys. B   2019 Vol.28 (5): 58502-058502 [Abstract] (116) [HTML 1 KB] [PDF 494 KB] (88)
47302 Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng
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    Chin. Phys. B   2019 Vol.28 (4): 47302-047302 [Abstract] (93) [HTML 1 KB] [PDF 496 KB] (68)
38502 Yan-Li Wang, Pei-Xian Li, Sheng-Rui Xu, Xiao-Wei Zhou, Xin-Yu Zhang, Si-Yu Jiang, Ru-Xue Huang, Yang Liu, Ya-Li Zi, Jin-Xing Wu, Yue Hao
  Double superlattice structure for improving the performance of ultraviolet light-emitting diodes
    Chin. Phys. B   2019 Vol.28 (3): 38502-038502 [Abstract] (117) [HTML 1 KB] [PDF 818 KB] (52)
27301 Sheng-Lei Zhao, Zhi-Zhe Wang, Da-Zheng Chen, Mao-Jun Wang, Yang Dai, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
    Chin. Phys. B   2019 Vol.28 (2): 27301-027301 [Abstract] (107) [HTML 1 KB] [PDF 507 KB] (79)
27302 Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang
  Theoretical analytic model for RESURF AlGaN/GaN HEMTs
    Chin. Phys. B   2019 Vol.28 (2): 27302-027302 [Abstract] (161) [HTML 1 KB] [PDF 504 KB] (77)
18503 Lin-Yuan Wang, Wei-Dong Song, Wen-Xiao Hu, Guang Li, Xing-Jun Luo, Hu Wang, Jia-Kai Xiao, Jia-Qi Guo, Xing-Fu Wang, Rui Hao, Han-Xiang Yi, Qi-Bao Wu, Shu-Ti Li
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    Chin. Phys. B   2019 Vol.28 (1): 18503-018503 [Abstract] (93) [HTML 1 KB] [PDF 746 KB] (62)
97201 Jing Zhang, Hongliang Lv, Haiqiao Ni, Zhichuan Niu, Yuming Zhang
  Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
    Chin. Phys. B   2018 Vol.27 (9): 97201-097201 [Abstract] (162) [HTML 1 KB] [PDF 849 KB] (123)
97203 Yi-Dong Wang, Jun Chen
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47101 Jin-Lun Li, Shao-Hui Cui, Jian-Xing Xu, Xiao-Ran Cui, Chun-Yan Guo, Ben Ma, Hai-Qiao Ni, Zhi-Chuan Niu
  Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector
    Chin. Phys. B   2018 Vol.27 (4): 47101-047101 [Abstract] (242) [HTML 1 KB] [PDF 1343 KB] (174)
47305 Wei Mao, Hai-Yong Wang, Peng-Hao Shi, Xiao-Fei Wang, Ming Du, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
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47803 Bin Zhao, Wei Hu, Xian-Sheng Tang, Wen-Xue Huo, Li-Li Han, Ming-Long Zhao, Zi-Guang Ma, Wen-Xin Wang, Hai-Qiang Jia, Hong Chen
  Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
    Chin. Phys. B   2018 Vol.27 (4): 47803-047803 [Abstract] (136) [HTML 1 KB] [PDF 655 KB] (177)
26802 Jing-Yun Bi, Li-Hong Han, Qian Wang, Li-Yuan Wu, Ruge Quhe, Peng-Fei Lu
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    Chin. Phys. B   2018 Vol.27 (2): 26802-026802 [Abstract] (137) [HTML 0 KB] [PDF 753 KB] (128)
107301 Tie-Cheng Han, Hong-Dong Zhao, Lei Yang, Yang Wang
  Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier
    Chin. Phys. B   2017 Vol.26 (10): 107301-107301 [Abstract] (153) [HTML 1 KB] [PDF 349 KB] (385)
98504 Jianfei Li, Yuanjie Lv, Changfu Li, Ziwu Ji, Zhiyong Pang, Xiangang Xu, Mingsheng Xu
  Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs
    Chin. Phys. B   2017 Vol.26 (9): 98504-098504 [Abstract] (150) [HTML 0 KB] [PDF 937 KB] (216)
88702 Jian-Xing Xu, Jin-Lun Li, Si-Hang Wei, Ben Ma, Yi Zhang, Yu Zhang, Hai-Qiao Ni, Zhi-Chuan Niu
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47305 Hui Wang, Ning Wang, Ling-Li Jiang, Xin-Peng Lin, Hai-Yue Zhao, Hong-Yu Yu
  A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
    Chin. Phys. B   2017 Vol.26 (4): 47305-047305 [Abstract] (218) [HTML 1 KB] [PDF 684 KB] (306)
37305 Pan Dai, Jianya Lu, Ming Tan, Qingsong Wang, Yuanyuan Wu, Lian Ji, Lifeng Bian, Shulong Lu, Hui Yang
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    Chin. Phys. B   2017 Vol.26 (3): 37305-037305 [Abstract] (329) [HTML 1 KB] [PDF 327 KB] (401)
18505 Xi Han(韩玺), Wei Xiang(向伟), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Yao-Yao Sun(孙姚耀), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川)
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127305 Wei Mao, Ju-Sheng Fan, Ming Du, Jin-Feng Zhang, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
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117304 Fang Liu, Zhixin Qin
  Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact
    Chin. Phys. B   2016 Vol.25 (11): 117304-117304 [Abstract] (119) [HTML 1 KB] [PDF 433 KB] (194)
117305 Yun-Long He, Chong Wang, Min-Han Mi, Xue-Feng Zheng, Meng Zhang, Meng-Di Zhao, Heng-Shuang Zhang, Li-Xiang Chen, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao
  Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
    Chin. Phys. B   2016 Vol.25 (11): 117305-117305 [Abstract] (391) [HTML 1 KB] [PDF 1879 KB] (293)
118801 Yanjiao Shen, Jianhui Chen, Jing Yang, Bingbing Chen, Jingwei Chen, Feng Li, Xiuhong Dai, Haixu Liu, Ying Xu, Yaohua Mai
  Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD
    Chin. Phys. B   2016 Vol.25 (11): 118801-118801 [Abstract] (168) [HTML 1 KB] [PDF 1393 KB] (264)
97202 Jun Chen, Jiabing Lv
  Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs
    Chin. Phys. B   2016 Vol.25 (9): 97202-097202 [Abstract] (229) [HTML 1 KB] [PDF 233 KB] (210)
97307 Wenqi Wang(王文奇), Lu Wang(王禄), Yang Jiang(江洋), Ziguang Ma(马紫光), Ling Sun(孙令), Jie Liu(刘洁), Qingling Sun(孙庆灵), Bin Zhao(赵斌), Wenxin Wang(王文新), Wuming Liu(刘伍明), Haiqiang Jia(贾海强), Hong Chen(陈弘)
  Carrier transport in III-V quantum-dot structures for solar cells or photodetectors
    Chin. Phys. B   2016 Vol.25 (9): 97307-097307 [Abstract] (294) [HTML 1 KB] [PDF 593 KB] (340)
87201 Xiao-Chuan Deng, Xi-Xi Chen, Cheng-Zhan Li, Hua-Jun Shen, Jin-Ping Zhang
  Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers
    Chin. Phys. B   2016 Vol.25 (8): 87201-087201 [Abstract] (218) [HTML 1 KB] [PDF 1372 KB] (312)
87304 Xiao-Ling Duan, Jin-Cheng Zhang, Ming Xiao, Yi Zhao, Jing Ning, Yue Hao
  Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
    Chin. Phys. B   2016 Vol.25 (8): 87304-087304 [Abstract] (207) [HTML 1 KB] [PDF 865 KB] (298)
87801 Ya-Li Liu, Peng Jin, Gui-Peng Liu, Wei-Ying Wang, Zhi-Qiang Qi, Chang-Qing Chen, Zhan-Guo Wang
  Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells
    Chin. Phys. B   2016 Vol.25 (8): 87801-087801 [Abstract] (142) [HTML 1 KB] [PDF 300 KB] (239)
88505 Ping Qin, Wei-Dong Song, Wen-Xiao Hu, Yuan-Wen Zhang, Chong-Zhen Zhang, Ru-Peng Wang, Liang-Liang Zhao, Chao Xia, Song-Yang Yuan, Yi-an Yin, Shu-Ti Li, Shi-Chen Su
  Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer
    Chin. Phys. B   2016 Vol.25 (8): 88505-088505 [Abstract] (241) [HTML 1 KB] [PDF 315 KB] (270)
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