Analysis of optoelectronic properties of TiO2 nanowiers/Si heterojunction arrays

doi:10.1088/1674-1056/23/10/107302

Abstract The optoelectronic properties of n-TiO₂NW/p-Si heterojunction fabricated by depositing TiO₂ nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO₂ nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet (UV) illumination. n-TiO₂NW/p-Si has a p-n junction formed in the n-TiO₂/p-Si heterojunction. TiO₂NW/Si photodiode produces a photocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO₂ and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.

Keywords: TiO₂ nanowires photoresponse I-V characteristics heterojunction

Received: 25 October 2013
Revised: 19 February 2014
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.50.Pz	(Photoconduction and photovoltaic effects)
	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

Corresponding Authors: Saeideh Ramezani Sani
E-mail: ramezanisani@yahoo.com,_ramezani@riau.ac.ir

About author: 73.40.Kp; 73.40.lq; 73.50.pz; 78.67.-n

Cite this article:

Saeideh Ramezani Sani Analysis of optoelectronic properties of TiO₂ nanowiers/Si heterojunction arrays 2014 Chin. Phys. B 23 107302


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Analysis of optoelectronic properties of TiO2 nanowiers/Si heterojunction arrays

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Analysis of optoelectronic properties of TiO₂ nanowiers/Si heterojunction arrays