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Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse |
| Haotian Jiang(蒋浩天), Xing Xu(徐兴), Chao Fan(樊超), Beibei Dai(代贝贝), Zhuodong Qi(亓卓栋), Sha Jiang(蒋莎), Mengqiu Cai(蔡孟秋), and Qinglin Zhang(张清林)† |
| Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China |
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Abstract Bi$_{2}$O$_{2}$Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties. However, it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi$_{2}$O$_{2}$Se nanosheets. Here, a two-step chemical vapor deposition (CVD) route was used to directly grow the CsPbBr$_{3}$ nanoplate-Bi$_{2}$O$_{2}$Se nanosheet heterostructures. The CsPbBr$_{3}$ nanoplates were selectively grown on the Bi$_{2}$O$_{2}$Se nanosheet along the edges, where the dangling bonds provide the nucleation sites. The epitaxial relationships between CsPbBr$_{3}$ and Bi$_{2}$O$_{2}$Se were determined as ${[200]}_{\rm Bi_{2}O_{2}Se}||{[110]}_{\rm CsPbBr_{3}}$ and ${[110]}_{\rm Bi_{2}O_{2}Se}||{[200]}_{\rm CsPbBr_{3}}$ by transmission electron microscopy characterization. The photoluminescence (PL) results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-I band arrangement at CsPbBr$_{3}$/Bi$_{2}$O$_{2}$Se interface, which was confirmed by ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe measurements, and makes the photogenerated carriers transfer from CsPbBr$_{3}$ to Bi$_{2}$O$_{2}$Se. Importantly, the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi$_{2}$O$_{2}$Se sheets, and the fast rise and decay time in microsecond. These results indicate that the direct epitaxy of the CsPbBr$_{3}$ plates on the Bi$_{2}$O$_{2}$Se sheet may improve the optoelectronic performance of Bi$_{2}$O$_{2}$Se based devices.
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Received: 15 May 2021
Revised: 23 September 2021
Accepted manuscript online: 29 September 2021
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PACS:
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81.05.Zx
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(New materials: theory, design, and fabrication)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: The authors are grateful to the National Natural Science Foundation of China (Grant No. 51772088) and Hunan Provincial Innovation Foundation for Postgraduate, China (Grant No. CX20200422), and thank Prof. Huigao Duan for the help of the PL measurements. |
Corresponding Authors:
Qinglin Zhang
E-mail: qinglin.zhang@hnu.edu.cn
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Cite this article:
Haotian Jiang(蒋浩天), Xing Xu(徐兴), Chao Fan(樊超), Beibei Dai(代贝贝), Zhuodong Qi(亓卓栋), Sha Jiang(蒋莎), Mengqiu Cai(蔡孟秋), and Qinglin Zhang(张清林) Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse 2022 Chin. Phys. B 31 048102
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