High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar

doi:10.1088/1674-1056/22/6/068501

Abstract A novel super-junction lateral double diffused metal-oxide semiconductor (SJ-LDMOS) with partial lightly doped P pillar (PD) is proposed. Firstly, the reduction of the charges in the partial P pillar ensures the charge balance and suppresses the substrate assisted depletion effect. Secondly, the new electric field peak produced by P/P^- junction modulates the surface electric field distribution. Both of them result in a high breakdown voltage (BV). In addition, due to the same conduction paths, the specific on-resistance (R_on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at 15-μm drift length, resulting in a BV of 300 V.

Keywords: super-junction lateral double diffused metal-oxide semiconductor partial lightly doped pillar electric field modulation breakdown voltage

Received: 13 September 2012
Revised: 15 December 2012
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	84.70.p

Fund: Projects supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201), the National Natural Science Foundation of China (Grant No. 61176069), and the National Defense Pre-Research of China (Grant No. 51308020304).

Corresponding Authors: Wu Wei
E-mail: wuweiwwu@163.com

Cite this article:

Wu Wei (伍伟), Zhang Bo (张波), Fang Jian (方健), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar 2013 Chin. Phys. B 22 068501

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High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar

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