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Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes |
Adem Tataroğlu |
Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey |
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Abstract In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×103 and 1.27×104, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (Nss) is obtained from the forward bias I-V. In addition, the values of series resistance (Rs) for the two diodes are calculated from Cheung's method and Ohm's law.
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Received: 18 September 2012
Revised: 01 November 2012
Accepted manuscript online:
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PACS:
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.20.-r
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(Electron states at surfaces and interfaces)
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73.20.At
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(Surface states, band structure, electron density of states)
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Fund: Project supported by Gazi University Scientific Research Project (BAP), FEF. 05/2012-15. |
Corresponding Authors:
Adem Tataroğlu
E-mail: ademt@gazi.edu.tr
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Cite this article:
Adem Tataroğlu Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes 2013 Chin. Phys. B 22 068402
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