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Chin. Phys. B, 2013, Vol. 22(6): 068402    DOI: 10.1088/1674-1056/22/6/068402
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

Adem Tataroğlu
Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey
Abstract  In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×103 and 1.27×104, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (Nss) is obtained from the forward bias I-V. In addition, the values of series resistance (Rs) for the two diodes are calculated from Cheung's method and Ohm's law.
Keywords:  Au/n-Si and Au/Si3N4/n-Si type diode      I-V and C-V measurements      ideality factor      barrier height  
Received:  18 September 2012      Revised:  01 November 2012      Accepted manuscript online: 
PACS:  84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.20.-r (Electron states at surfaces and interfaces)  
  73.20.At (Surface states, band structure, electron density of states)  
Fund: Project supported by Gazi University Scientific Research Project (BAP), FEF. 05/2012-15.
Corresponding Authors:  Adem Tataroğlu     E-mail:  ademt@gazi.edu.tr

Cite this article: 

Adem Tataroğlu Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes 2013 Chin. Phys. B 22 068402

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