Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

doi:10.1088/1674-1056/22/2/027305

Abstract An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench (HK TG VDMOS) is proposed in this paper. The HK TG VDMOS features a high-k (HK) trench below the trench gate. Firstly, the extended HK trench not only causes an assistant depletion of the n-drift region, but also optimizes the electric field, which therefore reduces R_on,sp and increases the breakdown voltage (BV). Secondly, the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration. Thirdly, compared with the super-junction (SJ) vertical double-diffused metal-oxide semiconductor (VDMOS), the new device is simplified in fabrication by etching and filling the extended trench. The HK TG VDMOS with BV=172 V and R_on,sp=0.85 mΩ·cm² is obtained by simulation; its R_on,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%, in comparison with those of the conventional trench gate VDMOS (TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).

Keywords: high permittivity specific on-resistance breakdown voltage trench gate

Received: 19 April 2012
Revised: 08 July 2012
Accepted manuscript online:

PACS:	73.40.Ty	(Semiconductor-insulator-semiconductor structures)
	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
	73.61.Ng	(Insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 61176069 ) and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062).

Corresponding Authors: Luo Xiao-Rong
E-mail: xrluo@uestc.edu.cn

Cite this article:

Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波) Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench 2013 Chin. Phys. B 22 027305

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Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

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