Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor

doi:10.1088/1674-1056/20/5/058501

Abstract AlGaN/GaN depletion-mode high-electron-mobility transistor (D-HEMT) and fluorine (F) plasma treated enhancement-mode high-electron-mobility transistor (E-HEMT) are exposed to ⁶⁰Co gamma radiation with a dose of 1.6 Mrad (Si). No degradation is observed in the performance of D-HEMT. However, the maximum transconductance of E-HEMT is increased after radiation. The 2DEG density and the mobility are calculated from the results of capacitance–voltage measurement. The electron mobility decreases after fluorine plasma treatment and recovers after radiation. Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices. A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT, but the density of the trap decreases by radiation. Fitting of G_p/ω data yields the trap densities D_T= (1 - 3) × 10¹² cm^-2· eV^-1 and D_T= (0.2-0.8) × 10¹² cm^-2·eV^-1 before and after radiation, respectively. The time constant is 0.5 ms-6 ms. With F plasma treatment, the trap is introduced by etch damage and degrades the electronic mobility. After ⁶⁰Co gamma radiation, the etch damage decreases and the electron mobility is improved. The gamma radiation can recover the etch damage caused by F plasma treatment.

Keywords: AlGaN/GaN enhancement-mode high-electron-mobility transistors fluorine plasma treatment ⁶⁰Co gamma radiation

Received: 09 November 2010
Revised: 06 December 2010
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60736033) and the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009).

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Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) Influence of ⁶⁰Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor 2011 Chin. Phys. B 20 058501

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Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor

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Influence of ⁶⁰Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor