Chin. Phys. B
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Chin. Phys. B  2011, Vol. 20 Issue (10): 107101    DOI: 10.1088/1674-1056/20/10/107101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Partial-SOI high voltage P-channel LDMOS with interface accumulation holes
Hu Sheng-Donga, Luo Xiao-Rongb, Zhang Bob, Li Zhao-Jib, Wu Li-Juanc
a College of Communication Engineering, Chongqing University, Chongqing 400044, China; b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; c State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, Chin

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