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Measuring thermoelectric property of nano-heterostructure |
Lu Hong-Liang(路红亮), Zhang Chen-Dong(张晨栋), Cai Jin-Ming(蔡金明), Gao Min(高敏), Zou Qiang(邹强), Guo Hai-Ming(郭海明), and Gao Hong-Jun(高鸿钧)† |
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the it in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric potential. When the temperature of the substrate is elevated, while that of the tip is kept at room temperature, a thermoelectric potential occurs and can be detected by a current-voltage measurement. As an example of its application, the method is demonstrated to be effective to measure the thermoelectric power in several systems. A Seebeck coefficient of tens of μV/K is obtained in graphene epitaxially grown on Ru (0001) substrate and the thermoelectric potential polarity of this system is found to be the reverse of that of bare Ru (0001) substrate.
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Received: 06 May 2011
Revised: 20 May 2011
Accepted manuscript online:
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PACS:
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73.50.Lw
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(Thermoelectric effects)
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81.05.ue
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(Graphene)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976089) and the National Basic Research Program of China (Grant Nos. 2007CB936802 and 2009CB929103). |
Cite this article:
Lu Hong-Liang(路红亮), Zhang Chen-Dong(张晨栋), Cai Jin-Ming(蔡金明), Gao Min(高敏), Zou Qiang(邹强), Guo Hai-Ming(郭海明), and Gao Hong-Jun(高鸿钧) Measuring thermoelectric property of nano-heterostructure 2011 Chin. Phys. B 20 107301
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