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CN 11-5639/O4
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Other articles related with "73.20.-r":
47104 Min-Han Mi, Sheng Wu, Ling Yang, Yun-Long He, Bin Hou, Meng Zhang, Li-Xin Guo, Xiao-Hua Ma, Yue Hao
  In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT
    Chin. Phys. B   2020 Vol.29 (4): 47104-047104 [Abstract] (50) [HTML 1 KB] [PDF 1157 KB] (76)
47304 Qing Zhu, Xiao-Hua Ma, Yi-Lin Chen, Bin Hou, Jie-Jie Zhu, Meng Zhang, Mei Wu, Ling Yang, Yue Hao
  Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs
    Chin. Phys. B   2020 Vol.29 (4): 47304-047304 [Abstract] (52) [HTML 1 KB] [PDF 753 KB] (80)
37301 Xin-Yu Liu, Ji-Long Hao, Nan-Nan You, Yun Bai, Yi-Dan Tang, Cheng-Yue Yang, Sheng-Kai Wang
  High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
    Chin. Phys. B   2020 Vol.29 (3): 37301-037301 [Abstract] (58) [HTML 1 KB] [PDF 1104 KB] (65)
17304 T Zhang, G Li, S C Sun, N Qin, L Kang, S H Yao, H M Weng, S K Mo, L Li, Z K Liu, L X Yang, Y L Chen
  Electronic structure of correlated topological insulator candidate YbB6 studied by photoemission and quantum oscillation
    Chin. Phys. B   2020 Vol.29 (1): 17304-017304 [Abstract] (132) [HTML 1 KB] [PDF 1772 KB] (143)
117101 Junyeong Ahn, Sungjoon Park, Dongwook Kim, Youngkuk Kim, Bohm-Jung Yang
  Stiefel-Whitney classes and topological phases in band theory
    Chin. Phys. B   2019 Vol.28 (11): 117101-117101 [Abstract] (196) [HTML 1 KB] [PDF 4427 KB] (228)
77302 Zhen Zhu, Dong Yan, Xiao-Ang Nie, Hao-Ke Xu, Xu Yang, Dan-Dan Guan, Shiyong Wang, Yao-Yi Li, Canhua Liu, Jun-Wei Liu, Hui-Xia Luo, Hao Zheng, Jin-Feng Jia
  Scanning tunneling microscopic investigation on morphology of magnetic Weyl semimetal YbMnBi2
    Chin. Phys. B   2019 Vol.28 (7): 77302-077302 [Abstract] (205) [HTML 1 KB] [PDF 1491 KB] (148)
128103 Kesong Yang
  High-throughput design of functional materials using materials genome approach
    Chin. Phys. B   2018 Vol.27 (12): 128103-128103 [Abstract] (177) [HTML 1 KB] [PDF 6240 KB] (435)
97303 Wenhong Ouyang, Wensheng Lai, Zhengjun Zhang
  Ab initio study of H/O trapping and clustering on U/Al interface
    Chin. Phys. B   2018 Vol.27 (9): 97303-097303 [Abstract] (168) [HTML 1 KB] [PDF 1279 KB] (97)
87301 Deng-Ju He, Wei-Li Zhang, Rui Ma, Shan-Shan Wang, Xiao-Min Wu, Yun-Jiang Rao
  Transverse localization of Tamm plasmon in metal-DBR structure with disordered layer
    Chin. Phys. B   2018 Vol.27 (8): 87301-087301 [Abstract] (186) [HTML 1 KB] [PDF 1453 KB] (166)
87305 Xiahong Wang, Ping Li, Zhao Ran, Weidong Luo
  Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films
    Chin. Phys. B   2018 Vol.27 (8): 87305-087305 [Abstract] (174) [HTML 1 KB] [PDF 1591 KB] (86)
77301 Chaoyu Guo, Xiangzhi Meng, Qin Wang, Ying Jiang
  Image charge effect on the light emission of rutile TiO2(110) induced by a scanning tunneling microscope
    Chin. Phys. B   2018 Vol.27 (7): 77301-077301 [Abstract] (368) [HTML 1 KB] [PDF 1087 KB] (189)
47301 Yan-Peng Hong, Xin-Xin Wang, Guo-Liang Qu, Cheng-Jian Li, Hong-Xia Xue, Ke-Jian Liu, Yong-Chun Li, Chang-Min Xiong, Rui-Fen Dou, Lin He, Jia-Cai Nie
  Conductivity and band alignment of LaCrO3/SrTiO3 (111) heterostructure
    Chin. Phys. B   2018 Vol.27 (4): 47301-047301 [Abstract] (272) [HTML 1 KB] [PDF 830 KB] (151)
17105 Guang-Hao Hong, Cheng-Wei Wang, Juan Jiang, Cheng Chen, Sheng-Tao Cui, Hai-Feng Yang, Ai-Ji Liang, Shuai Liu, Yang-Yang Lv, Jian Zhou, Yan-Bin Chen, Shu-Hua Yao, Ming-Hui Lu, Yan-Feng Chen, Mei-Xiao Wang, Le-Xian Yang, Zhong-Kai Liu, Yu-Lin Chen
  Measurement of the bulk and surface bands in Dirac line-node semimetal ZrSiS
    Chin. Phys. B   2018 Vol.27 (1): 17105-017105 [Abstract] (648) [HTML 1 KB] [PDF 15876 KB] (558)
17304 Genhua Liu, Pingguo Xiao, Piaorong Xu, Huiying Zhou, Guanghui Zhou
  Electronic states and spin-filter effect in three-dimensional topological insulator Bi2Se3 nanoribbons
    Chin. Phys. B   2018 Vol.27 (1): 17304-017304 [Abstract] (172) [HTML 1 KB] [PDF 4856 KB] (147)
17502 Fei Guo, Yaping Wu, Zhiming Wu, Ting Chen, Heng Li, Chunmiao Zhang, Mingming Fu, Yihong Lu, Junyong Kang
  Strong anti-strain capacity of CoFeB/MgO interface on electronic structure and state coupling
    Chin. Phys. B   2018 Vol.27 (1): 17502-017502 [Abstract] (179) [HTML 1 KB] [PDF 2494 KB] (136)
127304 Majeed Ur Rehman, A A Abid
  Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures
    Chin. Phys. B   2017 Vol.26 (12): 127304-127304 [Abstract] (195) [HTML 1 KB] [PDF 5174 KB] (327)
127701 Qiu-Jie Sun, Yu-Ming Zhang, Qing-Wen Song, Xiao-Yan Tang, Yi-Meng Zhang, Cheng-Zhan Li, Yan-Li Zhao, Yi-Men Zhang
  Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO
    Chin. Phys. B   2017 Vol.26 (12): 127701-127701 [Abstract] (168) [HTML 0 KB] [PDF 659 KB] (170)
118103 Xun Yang, Hai-Bo Gan, Yan Tian, Ning-Sheng Xu, Shao-Zhi Deng, Jun Chen, Huanjun Chen, Shi-Dong Liang, Fei Liu
  An easy way to controllably synthesize one-dimensional SmB6 topological insulator nanostructures and exploration of their field emission applications
    Chin. Phys. B   2017 Vol.26 (11): 118103-118103 [Abstract] (259) [HTML 1 KB] [PDF 1952 KB] (291)
94201 Jia-Liang Wu, Bao-Qin Lin, Xin-Yu Da, Kai Wu
  A linear-to-circular polarization converter based on I-shapedcircular frequency selective surfaces
    Chin. Phys. B   2017 Vol.26 (9): 94201-094201 [Abstract] (214) [HTML 0 KB] [PDF 838 KB] (232)
45201 Ming Gao, Hui-Wei Du, Jie Yang, Lei Zhao, Jing Xu, Zhong-Quan Ma
  Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system
    Chin. Phys. B   2017 Vol.26 (4): 45201-045201 [Abstract] (167) [HTML 1 KB] [PDF 1051 KB] (216)
27101 Li-Juan Wu, Zhong-Jie Zhang, Yue Song, Hang Yang, Li-Min Hu, Na Yuan
  Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET
    Chin. Phys. B   2017 Vol.26 (2): 27101-027101 [Abstract] (169) [HTML 1 KB] [PDF 651 KB] (323)
117106 Chen Fang, Hongming Weng, Xi Dai, Zhong Fang
  Topological nodal line semimetals
    Chin. Phys. B   2016 Vol.25 (11): 117106-117106 [Abstract] (734) [HTML 1 KB] [PDF 413 KB] (1383)
117312 Z Q Yang, Jin-Feng Jia, Dong Qian
  Two-dimensional topological insulators with large bulk energy gap
    Chin. Phys. B   2016 Vol.25 (11): 117312-117312 [Abstract] (418) [HTML 1 KB] [PDF 4969 KB] (834)
88503 Yu-Rong Liu, Gao-Wei Zhao, Pai-To Lai, Ruo-He Yao
  Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
    Chin. Phys. B   2016 Vol.25 (8): 88503-088503 [Abstract] (158) [HTML 1 KB] [PDF 1344 KB] (489)
76802 Sheng-Chun Shen, Yan-Peng Hong, Cheng-Jian Li, Hong-Xia Xue, Xin-Xin Wang, Jia-Cai Nie
  In-plane anisotropy in two-dimensional electron gas at LaAlO3/SrTiO3(110) interface
    Chin. Phys. B   2016 Vol.25 (7): 76802-076802 [Abstract] (193) [HTML 1 KB] [PDF 614 KB] (394)
77101 Aiji Liang(梁爱基), Chaoyu Chen(陈朝宇), Zhijun Wang(王志俊), Youguo Shi(石友国), Ya Feng(冯娅), Hemian Yi(伊合绵), Zhuojin Xie(谢卓晋), Shaolong He(何少龙), Junfeng He(何俊峰), Yingying Peng(彭莹莹), Yan Liu(刘艳), Defa Liu(刘德发),
  Electronic structure, Dirac points and Fermi arc surface states in three-dimensional Dirac semimetal Na3Bi from angle-resolved photoemission spectroscopy
    Chin. Phys. B   2016 Vol.25 (7): 77101-077101 [Abstract] (523) [HTML 1 KB] [PDF 10904 KB] (532)
77302 Lin Yang, Chang-An Wang, Cong Liu, Ming-Hui Qin, Xu-Bing Lu, Xing-Sen Gao, Min Zeng, Jun-Ming Liu
  Strain-induced insulator-metal transition in ferroelectric BaTiO3 (001) surface: First-principles study
    Chin. Phys. B   2016 Vol.25 (7): 77302-077302 [Abstract] (207) [HTML 1 KB] [PDF 1070 KB] (533)
77305 Sa-Ke Wang, Jun Wang, Jun-Feng Liu
  Topological phase in one-dimensional Rashba wire
    Chin. Phys. B   2016 Vol.25 (7): 77305-077305 [Abstract] (320) [HTML 1 KB] [PDF 397 KB] (420)
37311 Simin Nie(聂思敏), Xiao Yan Xu(许霄琰), Gang Xu(徐刚), Zhong Fang(方忠)
  Band gap anomaly and topological properties in lead chalcogenides
    Chin. Phys. B   2016 Vol.25 (3): 37311-037311 [Abstract] (578) [HTML 1 KB] [PDF 1556 KB] (427)
18501 Mohsen Mahmoudi, Zahra Ahangari, Morteza Fathipour
  Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap
    Chin. Phys. B   2016 Vol.25 (1): 18501-018501 [Abstract] (400) [HTML 1 KB] [PDF 568 KB] (412)
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