Zou Jun(邹军)a)b)†, Liu Cheng-Xiang(刘成祥)c), Zhou Sheng-Ming(周圣明)a)‡, Wang Jun(王军)a), Zhou Jian-Hua(周建华)a)b), Huang Tao-Hua(黄涛华)a)b), Han Ping(韩平)c), Xie Zi-Li(谢自力)c), and Zhang Rong(张荣)c)
a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; b Graduate School of Chinese Academy of Sciences, Beijing 100039, China; c Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Abstract This paper reports that the $m$-plane GaN layer is grown on (200)-plane LiAlO$_{2}$ substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at $\sim$3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO$_{2}$ substrate.
Received: 12 December 2005
Revised: 08 March 2006
Accepted manuscript online:
Zou Jun(邹军), Liu Cheng-Xiang(刘成祥), Zhou Sheng-Ming(周圣明), Wang Jun(王军), Zhou Jian-Hua(周建华), Huang Tao-Hua(黄涛华), Han Ping(韩平), Xie Zi-Li(谢自力), and Zhang Rong(张荣) Growth studies of m-GaN layers on LiAlO2 by MOCVD 2006 Chinese Physics 15 2706
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