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CN 11-5639/O4
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Other articles related with "78.55.Cr":
54206 Yan Li, Xinzhu Sang
  Mid-infrared supercontinuum generation and its application on all-optical quantization with different input pulses
    Chin. Phys. B   2019 Vol.28 (5): 54206-054206 [Abstract] (122) [HTML 1 KB] [PDF 1297 KB] (91)
57102 Ding Yu, Guiying Shen, Hui Xie, Jingming Liu, Jing Sun, Youwen Zhao
  Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal
    Chin. Phys. B   2019 Vol.28 (5): 57102-057102 [Abstract] (115) [HTML 1 KB] [PDF 456 KB] (107)
34202 Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Cun-Zhu Tong, Yu Zhang, Zhi-Chuan Niu
  High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
    Chin. Phys. B   2019 Vol.28 (3): 34202-034202 [Abstract] (182) [HTML 1 KB] [PDF 1109 KB] (106)
14208 Sheng-Wen Xie, Yu Zhang, Cheng-Ao Yang, Shu-Shan Huang, Ye Yuan, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
  High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars
    Chin. Phys. B   2019 Vol.28 (1): 14208-014208 [Abstract] (370) [HTML 1 KB] [PDF 580 KB] (194)
124207 Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
  Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm
    Chin. Phys. B   2018 Vol.27 (12): 124207-124207 [Abstract] (127) [HTML 1 KB] [PDF 1989 KB] (134)
127803 Shuang-Tao Liu, Jing Yang, De-Gang Zhao, De-Sheng Jiang, Feng Liang, Ping Chen, Jian-Jun Zhu, Zong-Shun Liu, Wei Liu, Yao Xing, Li-Yuan Peng, Li-Qun Zhang, Wen-Jie Wang, Mo Li
  Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures
    Chin. Phys. B   2018 Vol.27 (12): 127803-127803 [Abstract] (125) [HTML 1 KB] [PDF 471 KB] (122)
127805 Hai-Long Wang, Xiao-Han Zhang, Hong-Xia Wang, Bin Li, Chong Chen, Yong-Xian Li, Huan Yan, Zhi-Sheng Wu, Hao Jiang
  Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas
    Chin. Phys. B   2018 Vol.27 (12): 127805-127805 [Abstract] (109) [HTML 1 KB] [PDF 1622 KB] (127)
47803 Bin Zhao, Wei Hu, Xian-Sheng Tang, Wen-Xue Huo, Li-Li Han, Ming-Long Zhao, Zi-Guang Ma, Wen-Xin Wang, Hai-Qiang Jia, Hong Chen
  Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
    Chin. Phys. B   2018 Vol.27 (4): 47803-047803 [Abstract] (191) [HTML 1 KB] [PDF 655 KB] (240)
27804 Jing Tang, Xiu-Lai Xu
  Magneto-optical properties of self-assembled InAs quantum dots for quantum information processing
    Chin. Phys. B   2018 Vol.27 (2): 27804-027804 [Abstract] (467) [HTML 1 KB] [PDF 2991 KB] (366)
107102 Shuang-Tao Liu, De-Gang Zhao, Jing Yang, De-Sheng Jiang, Feng Liang, Ping Chen, Jian-Jun Zhu, Zong-Shun Liu, Xiang Li, Wei Liu, Yao Xing, Li-Qun Zhang
  The residual C concentration control for low temperature growth p-type GaN
    Chin. Phys. B   2017 Vol.26 (10): 107102-107102 [Abstract] (140) [HTML 1 KB] [PDF 368 KB] (216)
107801 Yong-Biao Bai, You-Wen Zhao, Gui-Ying Shen, Xiao-Yu Chen, Jing-Ming Liu, Hui Xie, Zhi-Yuan Dong, Jun Yang, Feng-Yun Yang, Feng-Hua Wang
  N-type GaSb single crystals with high below-band gap transmission
    Chin. Phys. B   2017 Vol.26 (10): 107801-107801 [Abstract] (152) [HTML 1 KB] [PDF 630 KB] (243)
84202 Yong-Zhou Xue, Ze-Sheng Chen, Hai-Qiao Ni, Zhi-Chuan Niu, De-Sheng Jiang, Xiu-Ming Dou, Bao-Quan Sun
  Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm
    Chin. Phys. B   2017 Vol.26 (8): 84202-084202 [Abstract] (194) [HTML 1 KB] [PDF 278 KB] (219)
74208 Si-Hang Wei, Ben Ma, Ze-Sheng Chen, Yong-Ping Liao, Hong-Yue Hao, Yu Zhang, Hai-Qiao Ni, Zhi-Chuan Niu
  Spectral dynamical behavior in two-section, quantum well, mode-locked laser at 1.064μm
    Chin. Phys. B   2017 Vol.26 (7): 74208-074208 [Abstract] (170) [HTML 1 KB] [PDF 683 KB] (173)
77802 Wei Li, Peng Jin, Wei-Ying Wang, De-Feng Mao, Xu Pan, Xiao-Liang Wang, Zhan-Guo Wang
  Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer
    Chin. Phys. B   2017 Vol.26 (7): 77802-077802 [Abstract] (177) [HTML 1 KB] [PDF 425 KB] (223)
47801 Qing-Jun Xu, Bin Liu, Shi-Ying Zhang, Tao Tao, Zi-Li Xie, Xiang-Qian Xiu, Dun-Jun Chen, Peng Chen, Ping Han, Rong Zhang, You-Dou Zheng
  Structural characterization of Al0.55Ga0.45N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy
    Chin. Phys. B   2017 Vol.26 (4): 47801-047801 [Abstract] (169) [HTML 1 KB] [PDF 590 KB] (368)
27801 Sheng-Rui Xu, Ying Zhao, Ren-Yuan Jiang, Teng Jiang, Ze-Yang Ren, Jin-Cheng Zhang, Yue Hao
  22) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition[J]. Chinese Physics B, 2017,26(2): 027801-027801')"/> Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
    Chin. Phys. B   2017 Vol.26 (2): 27801-027801 [Abstract] (175) [HTML 1 KB] [PDF 2722 KB] (265)
17803 Feng Xu(徐峰), Peng Chen(陈鹏), Fu-Long Jiang(蒋府龙), Ya-Yun Liu(刘亚云), Zi-Li Xie(谢自立), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Yi Shi(施毅), Rong Zhang(张荣), You-Liao Zheng(郑有炓)
  High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
    Chin. Phys. B   2017 Vol.26 (1): 17803-017803 [Abstract] (217) [HTML 1 KB] [PDF 684 KB] (416)
107805 Xiang-Jun Shang, Jian-Xing Xu, Ben Ma, Ze-Sheng Chen, Si-Hang Wei, Mi-Feng Li, Guo-Wei Zha, Li-Chun Zhang, Ying Yu, Hai-Qiao Ni, Zhi-Chuan Niu
  Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots
    Chin. Phys. B   2016 Vol.25 (10): 107805-107805 [Abstract] (178) [HTML 1 KB] [PDF 1889 KB] (336)
77801 Jie Su, Tong Liu, Jing-Ming Liu, Jun Yang, Yong-Biao Bai, Gui-Ying Shen, Zhi-Yuan Dong, Fang-Fang Wang, You-Wen Zhao
  Thermally induced native defect transform in annealed GaSb
    Chin. Phys. B   2016 Vol.25 (7): 77801-077801 [Abstract] (199) [HTML 1 KB] [PDF 747 KB] (285)
58101 Yang Liu, Yongchun Yang
  Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes
    Chin. Phys. B   2016 Vol.25 (5): 58101-058101 [Abstract] (167) [HTML 1 KB] [PDF 448 KB] (227)
24204 Cheng-Ao Yang, Yu Zhang, Yong-Ping Liao, Jun-Liang Xing, Si-Hang Wei, Li-Chun Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
  2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography
    Chin. Phys. B   2016 Vol.25 (2): 24204-024204 [Abstract] (284) [HTML 1 KB] [PDF 966 KB] (327)
27102 Jing Yang, De-Gang Zhao, De-Sheng Jiang, Ping Chen, Zong-Shun Liu, Jian-Jun Zhu, Ling-Cong Le, Xiao-Jing Li, Xiao-Guang He, Li-Qun Zhang, Hui Yang
  Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films
    Chin. Phys. B   2016 Vol.25 (2): 27102-027102 [Abstract] (286) [HTML 1 KB] [PDF 722 KB] (395)
107304 Wang Xiao-Bo, Li Yong, Yan Ling-Ling, Li Xin-Jian
  Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
    Chin. Phys. B   2015 Vol.24 (10): 107304-107304 [Abstract] (392) [HTML 1 KB] [PDF 421 KB] (397)
78503 Li Jin, Xiong Bing, Sun Chang-Zheng, Luo Yi, Wang Jian, Hao Zhi-Biao, Han Yan-Jun, Wang Lai, Li Hong-Tao
  Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance
    Chin. Phys. B   2015 Vol.24 (7): 78503-078503 [Abstract] (235) [HTML 1 KB] [PDF 334 KB] (317)
67303 Wang Lai, Yang Di, Hao Zhi-Biao, Luo Yi
  Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes
    Chin. Phys. B   2015 Vol.24 (6): 67303-067303 [Abstract] (303) [HTML 1 KB] [PDF 1149 KB] (725)
56806 Zhao Yu-Kun, Li Yu-Feng, Huang Ya-Ping, Wang Hong, Su Xi-Lin, Ding Wen, Yun Feng
  Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection
    Chin. Phys. B   2015 Vol.24 (5): 56806-056806 [Abstract] (235) [HTML 1 KB] [PDF 1056 KB] (410)
57303 Ni Yi-Qiang, He Zhi-Yuan, Yao Yao, Yang Fan, Zhou De-Qiu, Zhou Gui-Lin, Shen Zhen, Zhong Jian, Zheng Yue, Zhang Bai-Jun, Liu Yang
  Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate
    Chin. Phys. B   2015 Vol.24 (5): 57303-057303 [Abstract] (239) [HTML 1 KB] [PDF 614 KB] (377)
48504 Jiang Zhi-Yun, Xie Hong-Yun, Zhang Liang-Hao, Zhang Wan-Rong, Hu Rui-Xin, Huo Wen-Juan
  Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor
    Chin. Phys. B   2015 Vol.24 (4): 48504-048504 [Abstract] (136) [HTML 0 KB] [PDF 266 KB] (274)
26802 Wang Jian-Xia, Wang Lian-Shan, Zhang Qian, Meng Xiang-Yue, Yang Shao-Yan, Zhao Gui-Juan, Li Hui-Jie, Wei Hong-Yuan, Wang Zhan-Guo
  Effect of the thickness of InGaN interlayer on a-plane GaN epilayer
    Chin. Phys. B   2015 Vol.24 (2): 26802-026802 [Abstract] (209) [HTML 0 KB] [PDF 488 KB] (334)
96802 Zhao Yun, Wang Gang, Yang Huai-Chao, An Tie-Lei, Chen Min-Jiang, Yu Fang, Tao Li, Yang Jian-Kun, Wei Tong-Bo, Duan Rui-Fei, Sun Lian-Feng
  Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst
    Chin. Phys. B   2014 Vol.23 (9): 96802-096802 [Abstract] (127) [HTML 1 KB] [PDF 990 KB] (1412)
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