EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GaAs FILM
CHEN ZHONG (陈忠)a, PI FEI-PENG (皮飞鹏)c, HU XIANG-WEI (胡湘威)a, LAI TIAN-SHU (赖天树)a, XU GENG (徐耕)a, MO DANG (莫党)a, LIN WEI-ZHU (林位株)ab
a Department of Physics, Zhongshan University, Guangzhou 510275, China; b State Key Laboratory of Ultrafast Laser Spectroscopy, Zhongshan University, Guangzhou 510275, China; c Department of Physics, Guangzhou Teachers College, Guangzhou 510400, China
Abstract Using CPM dye laser and self-mode-locked Ti sapphire laser as pump-probe optical sources, the effects of bandfilling and bandgap shrinkage on the femtosecond absorption saturation spectra of GaAs film have been studied, For exciting photon energy of 1.97eV and carrier density of 1×1018cm-3, an optical-induced absorption increase is observed and is attributed to bandgap shrinkage, The dependence of the absorption coefficient change on the carrier temperature and the carrier densities is discussed.
(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
CHEN ZHONG (陈忠), PI FEI-PENG (皮飞鹏), HU XIANG-WEI (胡湘威), LAI TIAN-SHU (赖天树), XU GENG (徐耕), MO DANG (莫党), LIN WEI-ZHU (林位株) EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GaAs FILM 1996 Acta Physica Sinica (Overseas Edition) 5 705
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