Abstract We have conducted numerical studies of ballistic electron transport in a semicon-ductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.
Received: 26 June 1995
Accepted manuscript online:
(Low-field transport and mobility; piezoresistance)
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
SHENG WEI-DONG (盛卫东), XIA JIAN-BAI (夏建白) SUPPRESSION OF BALLISTIC ELECTRON TRANSMISSION THROUGH A SEMICONDUCTOR Π-STRUCTURE BY AN EXTERNAL TRANSVERSE ELECTRIC FIELD 1996 Acta Physica Sinica (Overseas Edition) 5 700
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