Photoluminescence of green InGaN/GaN MQWs grown on pre-wells

doi:10.1088/1674-1056/abb65b

Abstract Photoluminescence (PL) characteristics of the structure consisting of green InGaN/GaN multiple quantum wells (MQWs) and low indium content InGaN/GaN pre-wells are investigated. Several PL peaks from pre-wells and green InGaN/GaN MQWs are observed. The peak energy values for both pre-wells and green InGaN/GaN MQWs display an S-shaped variation with temperature. In addition, the differences in the carrier localization effect, defect density, and phonon-exciton interaction between the pre-wells and green InGaN/GaN MQWs, and the internal quantum efficiency of the sample are studied. The obtained results elucidate the mechanism of the luminescence characteristics of the sample and demonstrate the significant stress blocking effect of pre-wells.

Keywords: InGaN/GaN photoluminescence pre-wells green LED

Received: 30 April 2020
Revised: 10 August 2020
Accepted manuscript online: 09 September 2020

PACS:	78.66.Fd	(III-V semiconductors)
	78.67.De	(Quantum wells)
	85.60.Jb	(Light-emitting devices)

Fund: Project supported by the Science Challenge Project, China (Grant No. TZ2016003), the National Key Research and Development Program of China (Grant Nos. 2016YFB0400803 and 2017YFE0131500), and the Fund from the State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, China.

Corresponding Authors: ^†Corresponding author. E-mail: bzhang@xmu.edu.cn

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Shou-Qiang Lai(赖寿强), Qing-Xuan Li(李青璇), Hao Long(龙浩), Jin-Zhao Wu(吴瑾照), Lei-Ying Ying(应磊莹), Zhi-Wei Zheng(郑志威), Zhi-Ren Qiu(丘志仁), and Bao-Ping Zhang(张保平) Photoluminescence of green InGaN/GaN MQWs grown on pre-wells 2020 Chin. Phys. B 29 127802

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Photoluminescence of green InGaN/GaN MQWs grown on pre-wells

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