Improvement of TE-polarized emission in type-Ⅱ InAlN-AlGaN/AlGaN quantum well

doi:10.1088/1674-1056/ab343a

Abstract

The optical properties of the type-Ⅱ lineup In_xAl_1-xN-Al_0.59Ga_0.41N/Al_0.74Ga_0.26N quantum well (QW) structures with different In contents are investigated by using the six-by-six K-P method. The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron f_cⁿ and hole (1-f_v^Um) and the approximately equal transverse electric (TE) polarization optical matrix elements (|M_x|²) for the c1-v1 transition. As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure. In addition, the type-Ⅱ QW structure with x~0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23. It can be attributed to the combined effect of|M_x|² and f_cⁿ (1-f_v_Um) for the c1-v1, c1-v2, and c1-v3 transitions.

Keywords: type-Ⅱ lineup quantum well K-P method transverse electric (TE) polarized emission

Received: 06 June 2019
Revised: 07 July 2019
Accepted manuscript online:

PACS:	78.66.Fd	(III-V semiconductors)
	78.67.De	(Quantum wells)
	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
	78.67.Pt	(Multilayers; superlattices; photonic structures; metamaterials)

Fund:

Project supported by the Talent Introduction Project of Nantong University, China (Grant No. 03081055), the National Natural Science Foundation of China (Grant Nos. 61874168 and 61505090), Top-notch Academic Programs Project of Jiangsu Higher Education Institutions, China (Grant No. PPZY2015B135), the Six Top Talents of Jiangsu Province, China (Grant No. 2016-XCL-052), the Natural Science Foundation of Nantong University, China (Grant Nos. 03080666 and 14Z003), the Qing Lan Project of Jiangsu Province, China, and Key NSF Program of Jiangsu Provincial Department of Education, China (Grant No. 15KJA510004).

Corresponding Authors: Youhua Zhu
E-mail: ntyouhua@ntu.edu.cn

Cite this article:

Yi Li(李毅), Youhua Zhu(朱友华), Meiyu Wang(王美玉), Honghai Deng(邓洪海), Haihong Yin(尹海宏) Improvement of TE-polarized emission in type-Ⅱ InAlN-AlGaN/AlGaN quantum well 2019 Chin. Phys. B 28 097801

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Improvement of TE-polarized emission in type-Ⅱ InAlN-AlGaN/AlGaN quantum well

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