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CN 11-5639/O4
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Other articles related with "71.20.Nr":
128502 Cheng-Yun Hong, Gang-Feng Huang, Wen-Wen Yao, Jia-Jun Deng, Xiao-Long Liu
  Thickness-modulated in-plane Bi2O2Se homojunctions for ultrafast high-performance photodetectors
    Chin. Phys. B   2019 Vol.28 (12): 128502-128502 [Abstract] (51) [HTML 1 KB] [PDF 1538 KB] (76)
88503 Xiao-Fei Ma, Yuan-Qi Huang, Yu-Song Zhi, Xia Wang, Pei-Gang Li, Zhen-Ping Wu, Wei-Hua Tang
  Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions
    Chin. Phys. B   2019 Vol.28 (8): 88503-088503 [Abstract] (44) [HTML 1 KB] [PDF 5248 KB] (63)
36101 Zhenyang Ma, Peng Wang, Fang Yan, Chunlei Shi, Yi Tian
  Physical properties of B4N4-I and B4N4-Ⅱ: First-principles study
    Chin. Phys. B   2019 Vol.28 (3): 36101-036101 [Abstract] (92) [HTML 1 KB] [PDF 1856 KB] (77)
17101 Shi-Yi Zhuo, Xue-Chao Liu, Wei Huang, Hai-Kuan Kong, Jun Xin, Er-Wei Shi
  Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants
    Chin. Phys. B   2019 Vol.28 (1): 17101-017101 [Abstract] (213) [HTML 1 KB] [PDF 455 KB] (100)
17305 Xia Wang, Zhen-Ping Wu, Wei Cui, Yu-Song Zhi, Zhi-Peng Li, Pei-Gang Li, Dao-You Guo, Wei-Hua Tang
  Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers
    Chin. Phys. B   2019 Vol.28 (1): 17305-017305 [Abstract] (164) [HTML 1 KB] [PDF 2459 KB] (159)
127803 Shuang-Tao Liu, Jing Yang, De-Gang Zhao, De-Sheng Jiang, Feng Liang, Ping Chen, Jian-Jun Zhu, Zong-Shun Liu, Wei Liu, Yao Xing, Li-Yuan Peng, Li-Qun Zhang, Wen-Jie Wang, Mo Li
  Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures
    Chin. Phys. B   2018 Vol.27 (12): 127803-127803 [Abstract] (94) [HTML 1 KB] [PDF 471 KB] (86)
87102 Xue-Qian Zhong, Jue Wang, Bao-Zhu Wang, Heng-Yu Wang, Qing Guo, Kuang Sheng
  Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes
    Chin. Phys. B   2018 Vol.27 (8): 87102-087102 [Abstract] (199) [HTML 0 KB] [PDF 1573 KB] (128)
67301 Shu-Juan Cui, Zeng-Xia Mei, Yao-Nan Hou, Quan-Sheng Chen, Hui-Li Liang, Yong-Hui Zhang, Wen-Xing Huo, Xiao-Long Du
  Enhanced photoresponse performance in Ga/Ga2O3 nanocomposite solar-blind ultraviolet photodetectors
    Chin. Phys. B   2018 Vol.27 (6): 67301-067301 [Abstract] (98) [HTML 1 KB] [PDF 2796 KB] (131)
57101 Pei-Da Wang, Zhen-Yuan Jia, Yu-Han Zhong, Hua-Yue Mei, Chun-Mei Li, Nan-Pu Cheng
  Effect of pressure on the elastic properties and optoelectronic behavior of Zn4B6O13: First-principles investigation
    Chin. Phys. B   2018 Vol.27 (5): 57101-057101 [Abstract] (138) [HTML 1 KB] [PDF 2542 KB] (116)
47103 Yi-Jie Zhang, Zhi-Peng Yin, Yan Su, De-Jun Wang
  Passivation of carbon dimer defects in amorphous SiO2/4H-SiC (0001) interface: A first-principles study
    Chin. Phys. B   2018 Vol.27 (4): 47103-047103 [Abstract] (147) [HTML 1 KB] [PDF 3197 KB] (163)
18806 Dingrong Liu, Dan Han, Menglin Huang, Xian Zhang, Tao Zhang, Chenmin Dai, Shiyou Chen
  Theoretical study on the kesterite solar cells based on Cu2ZnSn(S,Se)4 and related photovoltaic semiconductors
    Chin. Phys. B   2018 Vol.27 (1): 18806-018806 [Abstract] (330) [HTML 1 KB] [PDF 5457 KB] (848)
126105 Zhen-Yang Ma, Fang Yan, Su-Xin Wang, Qiong-Qiong Jia, Xin-Hai Yu, Chun-Lei Shi
  Mechanical, elastic, anisotropy, and electronic properties of monoclinic phase of m-SixGe3-xN4
    Chin. Phys. B   2017 Vol.26 (12): 126105-126105 [Abstract] (136) [HTML 0 KB] [PDF 1537 KB] (171)
127402 Xiaohuai Wang, Chengzhao Chen, Shengqi Feng, Xinyuan Wei, Yun Li
  A hybrid functional first-principles study on the band structure of non-strained Ge1-xSnx alloys
    Chin. Phys. B   2017 Vol.26 (12): 127402-127402 [Abstract] (161) [HTML 0 KB] [PDF 3989 KB] (170)
107101 Zhan-Wei Shen, Feng Zhang, Sima Dimitrijev, Ji-Sheng Han, Guo-Guo Yan, Zheng-Xin Wen, Wan-Shun Zhao, Lei Wang, Xing-Fang Liu, Guo-Sheng Sun, Yi-Ping Zeng
  Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO
    Chin. Phys. B   2017 Vol.26 (10): 107101-107101 [Abstract] (132) [HTML 1 KB] [PDF 1086 KB] (256)
107102 Shuang-Tao Liu, De-Gang Zhao, Jing Yang, De-Sheng Jiang, Feng Liang, Ping Chen, Jian-Jun Zhu, Zong-Shun Liu, Xiang Li, Wei Liu, Yao Xing, Li-Qun Zhang
  The residual C concentration control for low temperature growth p-type GaN
    Chin. Phys. B   2017 Vol.26 (10): 107102-107102 [Abstract] (128) [HTML 1 KB] [PDF 368 KB] (180)
87301 Song Yu, Yong-Chao Rao, Xiang-Mei Duan
  Modulating the properties of monolayer C2N: A promising metal-free photocatalyst for water splitting
    Chin. Phys. B   2017 Vol.26 (8): 87301-087301 [Abstract] (189) [HTML 1 KB] [PDF 11773 KB] (275)
77101 Jing Yang, De-Gang Zhao, De-Sheng Jiang, Ping Chen, Zong-Shun Liu, Jian-Jun Zhu, Xiang Li, Wei Liu, Feng Liang, Li-Qun Zhang, Hui Yang, Wen-Jie Wang, Mo Li
  Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials
    Chin. Phys. B   2017 Vol.26 (7): 77101-077101 [Abstract] (151) [HTML 1 KB] [PDF 295 KB] (346)
57101 K Bettine, O Sahnoun, M Sahnoun, M Driz
  Effect of anionic ordering on the electronic and optical properties of BaTaO2N: TB-mBJ density functional calculation
    Chin. Phys. B   2017 Vol.26 (5): 57101-057101 [Abstract] (227) [HTML 1 KB] [PDF 2586 KB] (338)
46101 Xiangyang Xu, Changchun Chai, Qingyang Fan, Yintang Yang
  Theoretical prediction of new C-Si alloys in C2/m-20 structure
    Chin. Phys. B   2017 Vol.26 (4): 46101-046101 [Abstract] (251) [HTML 1 KB] [PDF 1624 KB] (339)
47801 Qing-Jun Xu, Bin Liu, Shi-Ying Zhang, Tao Tao, Zi-Li Xie, Xiang-Qian Xiu, Dun-Jun Chen, Peng Chen, Ping Han, Rong Zhang, You-Dou Zheng
  Structural characterization of Al0.55Ga0.45N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy
    Chin. Phys. B   2017 Vol.26 (4): 47801-047801 [Abstract] (154) [HTML 1 KB] [PDF 590 KB] (310)
36301 A K M Farid Ul Islam, Md Nurul Huda Liton, H M Tariqul Islam, Md Al Helal, Md Kamruzzaman
  Mechanical and thermodynamical stability of BiVO4 polymorphs using first-principles study
    Chin. Phys. B   2017 Vol.26 (3): 36301-036301 [Abstract] (140) [HTML 1 KB] [PDF 3072 KB] (393)
37104 Wenbo Li, Ling Li, Fangfang Wang, Liu Zheng, Jinghua Xia, Fuwen Qin, Xiaolin Wang, Yongping Li, Rui Liu, Dejun Wang, Yan Pan, Fei Yang
  Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study
    Chin. Phys. B   2017 Vol.26 (3): 37104-037104 [Abstract] (213) [HTML 1 KB] [PDF 1782 KB] (432)
127101 Zong-Yan Zhao, Wen Yang, Pei-Zhi Yang
  Electronic structure of O-doped SiGe calculated by DFT+U method
    Chin. Phys. B   2016 Vol.25 (12): 127101-127101 [Abstract] (135) [HTML 1 KB] [PDF 89191 KB] (215)
127103 Jun-Hong Guo, Ting-Hui Li, Fang-Ren Hu, Li-Zhe Liu
  Identification of surface oxygen vacancy-related phonon-plasmon coupling in TiO2 single crystal
    Chin. Phys. B   2016 Vol.25 (12): 127103-127103 [Abstract] (139) [HTML 1 KB] [PDF 603 KB] (177)
118501 Hai-Yan Kang, Hui-Yong Hu, Bin Wang
  Analytical threshold voltage model for strained silicon GAA-TFET
    Chin. Phys. B   2016 Vol.25 (11): 118501-118501 [Abstract] (152) [HTML 0 KB] [PDF 354 KB] (217)
107105 Xiu-Qing Meng, Ning Tang, Mian-Zeng Zhong, Hui-Qun Ye, Yun-Zhang Fang
  Time-dependent evolution process of Sb2Te3 from nanoplates to nanorods and their Raman scattering properties
    Chin. Phys. B   2016 Vol.25 (10): 107105-107105 [Abstract] (144) [HTML 1 KB] [PDF 648 KB] (256)
97101 Yifan Jia, Hongliang Lv, Yingxi Niu, Ling Li, Qingwen Song, Xiaoyan Tang, Chengzhan Li, Yanli Zhao, Li Xiao, Liangyong Wang, Guangming Tang, Yimen Zhang, Yuming Zhang
  Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices
    Chin. Phys. B   2016 Vol.25 (9): 97101-097101 [Abstract] (191) [HTML 0 KB] [PDF 775 KB] (250)
86201 Chang-Bao Huang, Hai-Xin Wu, You-Bao Ni, Zhen-You Wang, Ming Qi, Chun-Li Zhang
  First-principles calculation of the structural, electronic, elastic, and optical properties of sulfur-doping ε-GaSe crystal
    Chin. Phys. B   2016 Vol.25 (8): 86201-086201 [Abstract] (215) [HTML 1 KB] [PDF 1249 KB] (352)
57301 Jing Wang, Peng Zhang, Xiang-Mei Duan
  First-principles modeling hydrogenation of bilayered boron nitride
    Chin. Phys. B   2016 Vol.25 (5): 57301-057301 [Abstract] (238) [HTML 1 KB] [PDF 1235 KB] (327)
47102 Qing-Wen Song, Xiao-Yan Tang, Hao Yuan, Yue-Hu Wang, Yi-Meng Zhang, Hui Guo, Ren-Xu Jia, Hong-Liang Lv, Yi-Men Zhang, Yu-Ming Zhang
  Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
    Chin. Phys. B   2016 Vol.25 (4): 47102-047102 [Abstract] (231) [HTML 1 KB] [PDF 5205 KB] (272)
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