Steady-state and transient electronic transport properties of β-(AlxGa1-x)2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation
Yan Liu(刘妍)1, Ping Wang(王平)1,†, Ting Yang(杨婷)1, Qian Wu(吴茜)1, Yintang Yang(杨银堂)2, and Zhiyong Zhang(张志勇)3
1 State Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi'an 710071, China; 2 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract The steady-state and transient electron transport properties of -(AlGa)O/GaO heterostructures were investigated by Monte Carlo simulation with the classic three-valley model. In particular, the electronic band structures were acquired by first-principles calculations, which could provide precise parameters for calculating the transport properties of the two-dimensional electron gas (2DEG), and the quantization effect was considered in the valley with the five lowest subbands. Wave functions and energy eigenvalues were obtained by iteration of the Schrödinger-Poisson equations to calculate the 2DEG scattering rates with five main scattering mechanisms considered. The simulated low-field electron mobilities agree well with the experimental results, thus confirming the effectiveness of our models. The results show that the room temperature electron mobility of the -(AlGa)O/GaO heterostructure at 10 kVcm is approximately 153.669 cmVs, and polar optical phonon scattering would have a significant impact on the mobility properties at this time. The region of negative differential mobility, overshoot of the transient electron velocity and negative diffusion coefficients are also observed when the electric field increases to the corresponding threshold value or even exceeds it. This work offers significant parameters for the -(AlGa)O/GaO heterostructure that may benefit the design of high-performance -(AlGa)O/GaO heterostructure-based devices.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61474090), the Key Research and Development Program of Shaanxi Province of China (Grant No. 2017ZDXM-GY-052), and the Fundamental Research Funds for the Central Universities (Grant No. 20109205456), and the Innovation Fund of Xidian University.
Corresponding Authors:
Ping Wang
E-mail: pingwang@xidian.edu.cn
Cite this article:
Yan Liu(刘妍), Ping Wang(王平), Ting Yang(杨婷), Qian Wu(吴茜), Yintang Yang(杨银堂), and Zhiyong Zhang(张志勇) Steady-state and transient electronic transport properties of β-(AlxGa1-x)2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation 2022 Chin. Phys. B 31 117305
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