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Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices |
| Ren-Ren Xu(徐忍忍)1,2,3, Qing-Zhu Zhang(张青竹)1,2, Long-Da Zhou(周龙达)1,2,3, Hong Yang(杨红)1,2,3,†, Tian-Yang Gai(盖天洋)1,2,3, Hua-Xiang Yin(殷华湘)1,2,3,‡, and Wen-Wu Wang(王文武)1,2,3 |
1 Integrated Circuit Advanced Process Center(ICAC), Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Microelectronics Devices&Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract A comprehensive study of the negative and positive bias temperature instability (NBTI/PBTI) of 3D FinFET devices with different small channel lengths is presented. It is found while with the channel lengths shrinking from 100 nm to 30 nm, both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better. Moreover, the channel length dependence on NBTI is more serious than that on PBTI. Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device, a physical mechanism of the channel length dependence on NBTI/PBTI is proposed. Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue, while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs. The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.
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Received: 05 May 2021
Revised: 08 July 2021
Accepted manuscript online: 14 July 2021
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported in part by the Science and Technology Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z201100004220001), the National Major Project of Science and Technology of China (Grant No. 2017ZX02315001), and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant Nos. Y9YS05X002 and E0YS01X001). |
Corresponding Authors:
Hong Yang, Hua-Xiang Yin
E-mail: yanghong@ime.ac.cn;yinhuaxiang@ime.ac.cn
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Cite this article:
Ren-Ren Xu(徐忍忍), Qing-Zhu Zhang(张青竹), Long-Da Zhou(周龙达), Hong Yang(杨红), Tian-Yang Gai(盖天洋), Hua-Xiang Yin(殷华湘), and Wen-Wu Wang(王文武) Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices 2022 Chin. Phys. B 31 017301
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