Optical and magnetic properties of InFeP layers prepared by Fe+ implantation

doi:10.1088/1674-1056/22/10/106105

Abstract InFeP layers are prepared by ion implantation of InP with 100-keV Fe⁺ ions to a dose of 5×10¹⁶ cm^-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400 ℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe³⁺ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 Oe (1 Oe=79.5775 A·m^-1), saturation magnetization of 4.35×10^-5 emu, and remnant magnetization of 4.4×10^-6 emu.

Keywords: ion implantation diluted magnetic semiconductor photoluminescence Rutherford backscattering/channeling

Received: 14 March 2013
Revised: 22 April 2013
Accepted manuscript online:

PACS:	61.72.U-	(Doping and impurity implantation)
	75.50.Pp	(Magnetic semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the International Cooperation Program of the Ministry of Science and Technology, China (Grant No. 2011DFR50580) and the Fundamental Research Funds for the Central Universities, China (Grant No. 20102020101000022).

Corresponding Authors: Fu De-Jun
E-mail: djfu@whu.edu.cn

Cite this article:

Zhou Lin (周霖), Shang Yan-Xia (尚艳霞), Wang Ze-Song (王泽松), Zhang Rui (张瑞), Zhang Zao-Di (张早娣), Vasiliy O. Pelenovich, Fu De-Jun (付德君), Kang Tae Won Optical and magnetic properties of InFeP layers prepared by Fe⁺ implantation 2013 Chin. Phys. B 22 106105

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Optical and magnetic properties of InFeP layers prepared by Fe+ implantation

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Optical and magnetic properties of InFeP layers prepared by Fe⁺ implantation