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Chin. Phys. B, 2021, Vol. 30(8): 087202    DOI: 10.1088/1674-1056/ac068f
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4

Kaiyao Zhou(周楷尧)1,2, Jun Deng(邓俊)1,2, Long Chen(陈龙)1,2, Wei Xia(夏威)4,5, Yanfeng Guo(郭艳峰)4,5, Yang Yang(杨洋)1,2, Jian-Gang Guo(郭建刚)1,3,†, and Liwei Guo(郭丽伟)1,2,3,‡
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China;
4 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
5 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
Abstract  Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb2SiTe4 is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb2SiTe4 with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm2·V-1·s-1 in bulk Nb2SiTe4, higher than the reported results. In a thin flake Nb2SiTe4, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb2SiTe4 for electronic device applications.
Keywords:  carrier mobility      anisotropic transport      Raman spectroscopy  
Received:  09 April 2021      Revised:  08 May 2021      Accepted manuscript online:  29 May 2021
PACS:  72.80.Ga (Transition-metal compounds)  
  72.20.Fr (Low-field transport and mobility; piezoresistance)  
  74.25.nd (Raman and optical spectroscopy)  
Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFE0202600, 2016YFA0300600, and 2017YFA0304700), by the National Natural Science Foundation of China (Grant Nos. 51922105, 51772322, and 11704401), and Beijing Natural Science Foundation (Grant No. Z200005).
Corresponding Authors:  Jian-Gang Guo, Liwei Guo     E-mail:  jgguo@iphy.ac.cn;lwguo@iphy.ac.cn

Cite this article: 

Kaiyao Zhou(周楷尧), Jun Deng(邓俊), Long Chen(陈龙), Wei Xia(夏威), Yanfeng Guo(郭艳峰), Yang Yang(杨洋), Jian-Gang Guo(郭建刚), and Liwei Guo(郭丽伟) Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4 2021 Chin. Phys. B 30 087202

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