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Chin. Phys. B, 2019, Vol. 28(10): 107301    DOI: 10.1088/1674-1056/ab3e00
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

Mei Ge(葛梅)1, Qing Cai(蔡青)1, Bao-Hua Zhang(张保花)2, Dun-Jun Chen(陈敦军)1, Li-Qun Hu(胡立群)1, Jun-Jun Xue(薛俊俊)3, Hai Lu(陆海)1, Rong Zhang(张荣)1, You-Dou Zheng(郑有炓)1
1 The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Department of Physics, Changji College, Changji 831100, China;
3 School of Electronic Science and Engineering, Nanjign University of Posts and Telecommunications, Nanjing 210023, China
Abstract  We investigate the negative transconductance effect in p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) associated with traps in the unintentionally doped GaN buffer layer. We find that a negative transconductance effect occurs with increasing the trap concentration and capture cross section when calculating transfer characteristics. The electron tunneling through AlGaN barrier and the reduced electric field discrepancy between drain side and gate side induced by traps are reasonably explained by analyzing the band diagrams, output characteristics, and the electric field strength of the channel of the devices under different trap concentrations and capture cross sections.
Keywords:  AlGaN/GaN      high-electron-mobility transistors (HEMTs)      traps      negative transconductance  
Received:  06 May 2019      Revised:  20 August 2019      Published:  05 October 2019
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402900), the National Natural Science Foundation of China (Grant No. 61634002), the Scientific Research Foundation of Graduate School of Nanjing University, China (Grant No. 2016CL03), and the Key Project of Jiangsu Province, China (Grant No. BE2016174).
Corresponding Authors:  Dun-Jun Chen     E-mail:  djchen@nju.edu.cn

Cite this article: 

Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer 2019 Chin. Phys. B 28 107301

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