Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS3

doi:10.1088/1674-1056/28/1/017401

Abstract

The transport and thermoelectric properties together with annealing of the new layered Bi-chalcogenide LaOBiHgS₃ are studied. On the transport part, the insulating behavior of the as-grown sample is evidently depressed by post annealing. A hump-like abnormality appears around 170 K. The thermoelectric performance of the sample is observably improved by the annealing, mainly because of the enhanced electrical conductance. The present results suggest that the physical properties of LaOBiHgS₃ are sensitive to post annealing and the possible micro adjustments that follow, indicating the layered Bi-chalcogenide family to be an ideal platform for designing novel functional materials.

Keywords: thermoelectric material Bi-chalcogenide post annealing

Received: 09 September 2018
Revised: 15 October 2018
Accepted manuscript online:

PACS:	74.25.F-	(Transport properties)
	74.62.En	(Effects of disorder)
	74.20.Rp	(Pairing symmetries (other than s-wave))
	74.70.Xa	(Pnictides and chalcogenides)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 51572001, 11404002, and 11404003) and the ‘211 Project’ of Anhui University, China (Grant No. J01001319J10113190007).

Corresponding Authors: Yi Yu
E-mail: onlyyuyi@mail.ustc.edu.cn

Cite this article:

Yi Yu(于一), Chunchang Wang(汪春昌), Liang Li(李亮), Qiuju Li(李秋菊), Chao Cheng(程超), Shuting Wang(王舒婷), Changjin Zhang(张昌锦) Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS₃ 2019 Chin. Phys. B 28 017401

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Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS3

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Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS₃