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Chin. Phys. B, 2018, Vol. 27(4): 048502    DOI: 10.1088/1674-1056/27/4/048502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator

Xue Chen(陈雪)1, Zhi-Gang Wang(汪志刚)1, Xi Wang(王喜)1, James B Kuo2
1. School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China;
2. “National” Taiwan University, Taipei, China
Abstract  

An improved vertical power double-diffused metal-oxide-semiconductor (DMOS) device with a p-region(P1) and high-κ insulator vertical double-diffusion metal-oxide-semiconductor (HKP-VDMOS) is proposed to achieve a better performance on breakdown voltage (BV)/specific on-resistance (Ron,sp) than conventional VDMOS with a high-κ insulator (CHK-VDMOS). The main mechanism is that with the introduction of the P-region, an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage. Due to the assisted depletion effect of this p-region, the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region. Meanwhile, based on the superposition of the depleted charges, a closed-form model for electric field/breakdown voltage is generally derived, which is in good agreement with the simulation result within 10% of error. An HKP-VDMOS device with a breakdown voltage of 600 V, a reduced specific on-resistance of 11.5 mΩ·cm2 and a figure of merit (FOM) (BV2/Ron,sp) of 31.2 MW·cm-2 shows a substantial improvement compared with the CHK-VDMOS device.

Keywords:  superposition      HKP-VDMOS      breakdown voltage      specific on-resistance  
Received:  12 December 2017      Revised:  15 January 2018      Published:  05 April 2018
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  77.55.df (For silicon electronics)  
  51.50.+v (Electrical properties)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Corresponding Authors:  Zhi-Gang Wang     E-mail:  zhigangwang@swjtu.edu.cn

Cite this article: 

Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator 2018 Chin. Phys. B 27 048502

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