Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

doi:10.1088/1674-1056/26/3/038504

Abstract

Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.

Keywords: transition metal dichalcogenides homojunction heterojunction photodetector

Received: 20 December 2016
Revised: 21 January 2017
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2014CB643903), the National Natural Science Foundation of China (Grant Nos. 61225021, 11474272, 11174272, and 11404324), and K. C. Wong Education Foundation.

Corresponding Authors: Kai-You Wang
E-mail: kywang@semi.ac.cn

Cite this article:

Xia Wei(魏侠), Fa-Guang Yan(闫法光), Chao Shen(申超), Quan-Shan Lv(吕全山), Kai-You Wang(王开友) Photodetectors based on junctions of two-dimensional transition metal dichalcogenides 2017 Chin. Phys. B 26 038504

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