Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

doi:10.1088/1674-1056/24/11/117201

Abstract Using the density functional theory and the nonequilibrium Green’s function method, we studied the finite-bias quantum transport in a Cr/graphene/Cr magnetotunnel junction (MTJ) constructed by a single graphene layer sandwiched between two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance (TMR) ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.

Keywords: graphene first-principles method magnetotunnel junction tunneling magnetoresistance

Received: 16 January 2015
Revised: 27 April 2015
Accepted manuscript online:

PACS:	72.15.Gd	(Galvanomagnetic and other magnetotransport effects)
	72.25.Mk	(Spin transport through interfaces)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10874143, 10974166, and 11574260), the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0169), the National Innovation Foundation for Graduate, China (Grant No. 201310530003), and the Computational Support from Shanghai Super-computer Center, China.

Corresponding Authors: Sun Li-Zhong
E-mail: lzsun@xtu.edu.cn

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Luan Gui-Ping (栾桂苹), Zhang Pei-Ran (张沛然), Jiao Na (焦娜), Sun Li-Zhong (孙立忠) Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction 2015 Chin. Phys. B 24 117201

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Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

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