| CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer |
| Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Zhu Jian-Jun, Liu Zong-Shun, Le Ling-Cong, Yang Jing, He Xiao-Guang |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Thin heavily Mg-doped InGaN and GaN compound contact layer is used to form Ni/Au Ohmic contact to p-GaN. The growth conditions of the compound contact layer and its effect on the performance of Ni/Au Ohmic contact to p-GaN are investigated. It is confirmed that the specific contact resistivity can be lowered nearly two orders by optimizing the growth conditions of compound contact layer. When the flow rate ratio between Mg and Ga gas sources of p++-InGaN layer is 10.6% and the thickness of p++-InGaN layer is 3 nm, the lowest specific contact resistivity of 3.98×10-5Ω·cm2 is achieved. In addition, the experimental results indicate that the specific contact resistivity can be further lowered to 1.07×10-7Ω ·cm2 by optimizing the alloying annealing temperature to 520 ℃.
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Received: 20 April 2015
Revised: 19 August 2015
Published: 05 November 2015
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PACS:
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68.35.Ja
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(Surface and interface dynamics and vibrations)
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61.72.uj
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(III-V and II-VI semiconductors)
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61.82.Bg
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(Metals and alloys)
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67.25.bh
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(Films and restricted geometries)
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| Fund: Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017). |
Corresponding Authors:
Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn
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Cite this article:
Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Zhu Jian-Jun, Liu Zong-Shun, Le Ling-Cong, Yang Jing, He Xiao-Guang Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer 2015 Chin. Phys. B 24 116803
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| [1] |
LinY J;2005 Appl. Phys. Lett. 86 122109
|
| [2] |
Nakamura S and Fasol G 1997 The Blue Laser Diode
|
| [3] |
Luther B P, Mohney S E, Jackson T N, Asif K M, Chen Q and Yang J W;1997 Appl. Phys. Lett. 70 57
|
| [4] |
Song J O, KimS H, Kwak J S and Seong T Y;2003 Appl. Phys. Lett. 83 1154
|
| [5] |
Huang Y P, Yun F, Ding W, Wang Y, Wang H, Zhao Y K, Zhang Y, Guo M F, Hou X and L S;2014 Acta. Phys. Sin. 63 127302 (in Chinese)
|
| [6] |
Narayan J, Wang H, Oh T H, Choi H K and Fan J C C;2002 Appl. Phys. Lett. 81 3978
|
| [7] |
Kim H K, Seong T Y, Adesida I, Tang C W and Lau K M;2004 Appl. Phys. Lett. 84 1710
|
| [8] |
Li T, Qin Z X, Xu Z Y, Shen B and Zhang G Y;2011 Chin. Phys. B 20 046101
|
| [9] |
Chary I, Chandolu A, Borisov B, Kuryatkov V, Nikishin S and Holtz M;2009 J. Electron. Mater. 38 545
|
| [10] |
Greco G, Prystawko P, Leszczynński M, Nigro R L, Raineri V and Roccaforte F;2011 J. Appl. Phys. 110 123703
|
| [11] |
Sun J, Rickert K A, Redwing J M, Ellis A B, Himpsel F J and Kuech T F;2000 Appl. Phys. Lett. 76 415
|
| [12] |
Gessmann T, Li Y L, Waldron E L, Graff J W, Schubert E F and Sheu J K;2002 Appl. Phys. Lett. 80 986
|
| [13] |
Jang J S and Seong T Y;2007 J. Appl. Phys. 101 013711
|
| [14] |
Jang J S, Sohn S J, Kim D and Seong T Y;2006 Semicond. Sci. Technol. 21 L37
|
| [15] |
Kwak J S;2004 J. Appl. Phys. 95 5917
|
| [16] |
Park Y and Kim H;2011 Appl. Phys. Express. 4 085701
|
| [17] |
Wu L L, Zhao D G, Jiang D S, Chen P, Le L C, Li L, Liu Z S, Zhang S M, Zhu J J, Wang H, Zhang B S and Yang H;2013 Semicond. Sci. Technol. 28 105020
|
| [18] |
Pettersen S V, Grande A P, Tybell T, Riechert H, Averbeck R and Grepstad J K;2007 Semicond. Sci. Technol. 22 186
|
| [19] |
Dai C C, Liu X C, Zhou T Y, Zhuo S Y, Shi B and Shi E W;2014 Chin. Phys. B 23 066803
|
| [20] |
Li X J, Zhao D G, Jiang D S, Liu Z S, Chen P, Zhu J J, Le L C, Yang J, He X G, Zhang S M, Zhang B S, Liu J P and Yang H;2014 J. Appl. Phys. 116 163708
|
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