Microwave ferromagnetic properties of as-deposited Co2FeSi Heusler alloy films prepared by oblique sputtering

doi:10.1088/1674-1056/23/8/086201

Abstract The Co₂FeSi films are deposited on Si (100) substrates by an oblique sputtering method at ambient temperature. It is revealed that the microwave ferromagnetic properties of Co₂FeSi films are sensitive to sample position and sputtering power. It is exciting that the as-deposited films without any magnetic annealing exhibit high in-plane uniaxial anisotropy fields in a range of 200 Oe-330 Oe (1 Oe=79.5775 A·m^-1), and low coercivities in a range of 5 Oe-28 Oe. As a result, high self-biased ferromagnetic resonance frequency up to 4.75 GHz is achieved in as-deposited oblique sputtered films. These results indicate that Co₂FeSi Heusler alloy films are promising in practical applications of RF/microwave devices.

Keywords: microwave ferromagnetic performances oblique sputtering ferromagnetic resonance Heusler alloy

Received: 04 September 2013
Revised: 19 December 2013
Published: 15 August 2014

PACS:	62.25.Fg	(High-frequency properties, responses to resonant or transient (time-dependent) fields)
	75.70.-i	(Magnetic properties of thin films, surfaces, and interfaces)
	75.30.Gw	(Magnetic anisotropy)
	71.55.Ak	(Metals, semimetals, and alloys)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11074040) and the Key Project of Department of Science and Technology of Shangdong Province of China (Grant No. ZR2012FZ006).

Corresponding Authors: Li Shan-Dong
E-mail: dylsd007@163.com,lishd@qdu.edu.cn

Cite this article:

Cao Xiao-Qin, Li Shan-Dong, Cai Zhi-Yi, Du Hong-Lei, Xue Qian, Gao Xiao-Yang, Xie Shi-Ming Microwave ferromagnetic properties of as-deposited Co₂FeSi Heusler alloy films prepared by oblique sputtering 2014 Chin. Phys. B 23 086201

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