Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

doi:10.1088/1674-1056/23/8/086104

Abstract Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset (SEU) effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of ²⁰⁹Bi have a wider distribution of energy deposition than ¹³²Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer (LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

Keywords: ion-velocity single event upset deposited energy traversed time

Received: 11 October 2013
Revised: 25 January 2014
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	95.75.-z	(Observation and data reduction techniques; computer modeling and simulation)
	24.10.Lx	(Monte Carlo simulations (including hadron and parton cascades and string breaking models))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

Corresponding Authors: Geng Chao, Liu Jie
E-mail: gengchao@impcas.ac.cn;j.liu@impcas.ac.cn

Cite this article:

Geng Chao (耿超), Xi Kai (习凯), Liu Tian-Qi (刘天奇), Gu Song (古松), Liu Jie (刘杰) Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect 2014 Chin. Phys. B 23 086104

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