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Other articles related with "interlayer"：
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48504 |
Zhongshu Feng(冯重舒), Changqiu Yu(于长秋), Haixia Huang(黄海侠), Haodong Fan(樊浩东),Mingzhang Wei(卫鸣璋), Birui Wu(吴必瑞), Menghao Jin(金蒙豪), Yanshan Zhuang(庄燕山),Ziji Shao(邵子霁), Hai Li(李海), Jiahong Wen(温嘉红), Jian Zhang(张鉴), Xuefeng Zhang(张雪峰),Ningning Wang(王宁宁), Sai Mu(穆赛), and Tiejun Zhou(周铁军) |
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Ta thickness effect on field-free switching and spin-orbit torque efficiency in a ferromagnetically coupled Co/Ta/CoFeB trilayer |
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Chin. Phys. B
2023 Vol.32 (4): 48504-048504
[Abstract]
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118801 |
Zheng Fang(方正), Liu Yang(杨柳), Yongbin Jin(靳永斌), Kaikai Liu(刘凯凯), Huiping Feng(酆辉平), Bingru Deng(邓冰如), Lingfang Zheng(郑玲芳), Changcai Cui(崔长彩), Chengbo Tian(田成波), Liqiang Xie(谢立强), Xipeng Xu(徐西鹏), and Zhanhua Wei(魏展画) |
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Sputtered SnO2 as an interlayer for efficient semitransparent perovskite solar cells |
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Chin. Phys. B
2022 Vol.31 (11): 118801-118801
[Abstract]
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86201 |
Le Wang(王乐), Zhao-Xuan Jing(荆照轩), Ao-Ran Zhou(周傲然), and Shan-Dong Li(李山东) |
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Ru thickness-dependent interlayer coupling and ultrahigh FMR frequency in FeCoB/Ru/FeCoB sandwich trilayers |
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Chin. Phys. B
2022 Vol.31 (8): 86201-086201
[Abstract]
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76104 |
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华) |
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Introducing voids around the interlayer of AlN by high temperature annealing |
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Chin. Phys. B
2022 Vol.31 (7): 76104-076104
[Abstract]
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87802 |
Lijun Wu(吴莉君), Cuihuan Ge(葛翠环), Kai Braun, Mai He(贺迈), Siman Liu(刘思嫚), Qingjun Tong(童庆军), Xiao Wang(王笑), and Anlian Pan(潘安练) |
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Polarized photoluminescence spectroscopy in WS2, WSe2 atomic layers and heterostructures by cylindrical vector beams |
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Chin. Phys. B
2021 Vol.30 (8): 87802-087802
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87306 |
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Signatures of strong interlayer coupling in γ-InSe revealed by local differential conductivity |
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Chin. Phys. B
2021 Vol.30 (8): 87306-087306
[Abstract]
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77503 |
Zi-Bo Zhang(张子博) and Yong Hu(胡勇) |
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Zero-field skyrmions in FeGe thin films stabilized through attaching a perpendicularly magnetized single-domain Ni layer |
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Chin. Phys. B
2021 Vol.30 (7): 77503-077503
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57801 |
Yanchong Zhao(赵岩翀), Tao Bo(薄涛), Luojun Du(杜罗军), Jinpeng Tian(田金朋), Xiaomei Li(李晓梅), Kenji Watanabe, Takashi Taniguchi, Rong Yang(杨蓉), Dongxia Shi(时东霞), Sheng Meng(孟胜), Wei Yang(杨威), and Guangyu Zhang(张广宇) |
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Thermally induced band hybridization in bilayer-bilayer MoS2/WS2 heterostructure |
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Chin. Phys. B
2021 Vol.30 (5): 57801-057801
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47303 |
Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益) |
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Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate |
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Chin. Phys. B
2020 Vol.29 (4): 47303-047303
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98801 |
Lyu Jinzhe, Andrey M Lider, Viktor N Kudiiarov |
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An overview of progress in Mg-based hydrogen storage films |
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Chin. Phys. B
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96101 |
Zbigniew Koziol, Grzegorz Gawlik, Jacek Jagielski |
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Van der Waals interlayer potential of graphitic structures: From Lennard-Jones to Kolmogorov-Crespy and Lebedeva models |
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Chin. Phys. B
2019 Vol.28 (9): 96101-096101
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107304 |
Yang Cheng(程阳), Chen Huang(黄琛), Hao Hong(洪浩), Zixun Zhao(赵子荀), Kaihui Liu(刘开辉) |
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Emerging properties of two-dimensional twisted bilayer materials |
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Chin. Phys. B
2019 Vol.28 (10): 107304-107304
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47804 |
Wen Luo(罗文), Li-Zhi Yan(闫立志), Rong Liu(刘荣), Tao-Yu Zou(邹涛隅), Hang Zhou(周航) |
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Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors |
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Chin. Phys. B
2019 Vol.28 (4): 47804-047804
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37501 |
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Antiferromagnetic interlayer coupling of (111)-oriented La0.67Sr0.33MnO3/SrRuO3 superlattices |
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Chin. Phys. B
2019 Vol.28 (3): 37501-037501
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127502 |
Yong Li(李勇), Xiangjun Jin(金香君), Pengfei Pan(潘鹏飞), Fu Nan Tan, Wen Siang Lew, Fusheng Ma(马付胜) |
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Temperature-dependent interlayer exchange coupling strength in synthetic antiferromagnetic[Pt/Co]2/Ru/[Co/Pt]4 multilayers |
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Chin. Phys. B
2018 Vol.27 (12): 127502-127502
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77405 |
Yiyuan Mao(毛义元), Zian Li(李子安), Huaxue Zhou(周花雪), Mingwei Ma(马明伟), Ke Chai(柴可), Shunli Ni(倪顺利), Shaobo Liu(刘少博), Jinpeng Tian(田金鹏), Yulong Huang(黄裕龙), Jie Yuan(袁洁), Fang Zhou(周放), Jianqi Li(李建奇), Kui Jin(金魁), Xiaoli Dong(董晓莉), Zhongxian Zhao(赵忠贤) |
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Effect of Mn substitution on superconductivity in iron selenide (Li, Fe)OHFeSe single crystals |
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Chin. Phys. B
2018 Vol.27 (7): 77405-077405
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18503 |
Shuaipu Zang(臧帅普), Yinglin Wang(王莹琳), Meiying Li(李美莹), Wei Su(苏蔚), Meiqi An(安美琦), Xintong Zhang(张昕彤), Yichun Liu(刘益春) |
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Performance enhancement of ZnO nanowires/PbS quantum dot depleted bulk heterojunction solar cells with an ultrathin Al2O3 interlayer |
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Chin. Phys. B
2018 Vol.27 (1): 18503-018503
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47801 |
Qing-Jun Xu(徐庆君), Bin Liu(刘斌), Shi-Ying Zhang(张士英), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Structural characterization of Al0.55Ga0.45N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy |
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Chin. Phys. B
2017 Vol.26 (4): 47801-047801
[Abstract]
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127304 |
Liu Chao-Wen (刘超文), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Lu Han-Han (卢汉汉) |
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High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment |
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Chin. Phys. B
2015 Vol.24 (12): 127304-127304
[Abstract]
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[HTML 1 KB]
[PDF 343 KB]
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57303 |
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Yao Yao (姚尧), Yang Fan (杨帆), Zhou De-Qiu (周德秋), Zhou Gui-Lin (周桂林), Shen Zhen (沈震), Zhong Jian (钟健), Zheng Yue (郑越), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) |
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Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate |
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Chin. Phys. B
2015 Vol.24 (5): 57303-057303
[Abstract]
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[HTML 1 KB]
[PDF 614 KB]
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26802 |
Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Zhang Qian (张谦), Meng Xiang-Yue (孟祥岳), Yang Shao-Yan (杨少延), Zhao Gui-Juan (赵桂娟), Li Hui-Jie (李辉杰), Wei Hong-Yuan (魏鸿源), Wang Zhan-Guo (王占国) |
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Effect of the thickness of InGaN interlayer on a-plane GaN epilayer |
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Chin. Phys. B
2015 Vol.24 (2): 26802-026802
[Abstract]
(685)
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[PDF 488 KB]
(354)
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67103 |
Li Liang (李亮), Yang Lin-An (杨林安), Xue Jun-Shuai (薛军帅), Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (6): 67103-067103
[Abstract]
(503)
[HTML 1 KB]
[PDF 1120 KB]
(549)
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66805 |
Wang Ming-E (王明娥), Ma Guo-Jia (马国佳), Dong Chuang (董闯), Gong Shui-Li (巩水利) |
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Preparation and characterization of thick cubic boron nitride films |
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Chin. Phys. B
2014 Vol.23 (6): 66805-066805
[Abstract]
(558)
[HTML 1 KB]
[PDF 344 KB]
(375)
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26801 |
Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Yang Shao-Yan (杨少延), Li Hui-Jie (李辉杰), Zhao Gui-Juan (赵桂娟), Zhang Heng (张恒), Wei Hong-Yuan (魏鸿源), Jiao Chun-Mei (焦春美), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
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Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer |
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Chin. Phys. B
2014 Vol.23 (2): 26801-026801
[Abstract]
(649)
[HTML 1 KB]
[PDF 690 KB]
(574)
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97301 |
Zhu Shu-Yan (朱述炎), Xu Jing-Ping (徐静平), Wang Li-Sheng (汪礼胜), Huang Yuan (黄苑) |
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Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer |
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Chin. Phys. B
2013 Vol.22 (9): 97301-097301
[Abstract]
(618)
[HTML 1 KB]
[PDF 271 KB]
(550)
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88104 |
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) |
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Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers |
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Chin. Phys. B
2013 Vol.22 (8): 88104-088104
[Abstract]
(674)
[HTML 1 KB]
[PDF 397 KB]
(3925)
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128101 |
Peng Dong-Sheng (彭冬生), Chen Zhi-Gang (陈志刚), Tan Cong-Cong (谭聪聪) |
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The influence of SixNy interlayer on GaN film grown on Si(111) substrate |
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Chin. Phys. B
2012 Vol.21 (12): 128101-128101
[Abstract]
(895)
[HTML 1 KB]
[PDF 1326 KB]
(520)
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107803 |
Jiao Zhi-Qiang(焦志强), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Dong Mu-Sen(董木森), Su Yue-Ju(苏跃举), Shen Li-Ying(申利莹), and Yin Shou-Gen(印寿根) |
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Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer |
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Chin. Phys. B
2011 Vol.20 (10): 107803-107803
[Abstract]
(1452)
[HTML 1 KB]
[PDF 162 KB]
(892)
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17202 |
Zang Yue(臧月), Yu Jun-Sheng(于军胜), Wang Na-Na(王娜娜), and Jiang Ya-Dong(蒋亚东) |
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Detailed analysis of ultrathin fluorescent red dye interlayer for organic photovoltaic cells |
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Chin. Phys. B
2011 Vol.20 (1): 17202-017202
[Abstract]
(1566)
[HTML 1 KB]
[PDF 1115 KB]
(911)
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57203 |
Xue Jun-Shuai(薛军帅), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), and Ni Jin-Yu(倪金玉) |
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Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers |
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Chin. Phys. B
2010 Vol.19 (5): 57203-057203
[Abstract]
(1308)
[HTML 1 KB]
[PDF 187 KB]
(906)
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36801 |
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉) |
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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer |
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Chin. Phys. B
2010 Vol.19 (3): 36801-036801
[Abstract]
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[HTML 1 KB]
[PDF 2177 KB]
(3110)
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4413 |
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Wang Yu-Tian(王玉田), Wang Hui (王辉), Chen Gui-Feng(陈贵锋), and Yang Hui(杨辉) |
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The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates |
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Chin. Phys. B
2009 Vol.18 (10): 4413-4417
[Abstract]
(1619)
[HTML 1 KB]
[PDF 2560 KB]
(1237)
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3894 |
Qiu Rong-Ke(邱荣科), Song Pan-Pan(宋攀攀), Zhang Zhi-Dong(张志东), and Guo Lian-Quan(郭连权) |
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Magnon energy gap in a four-layer ferromagnetic superlattice |
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Chin. Phys. B
2008 Vol.17 (10): 3894-3901
[Abstract]
(1240)
[HTML 1 KB]
[PDF 427 KB]
(575)
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529 |
Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略) |
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Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment |
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Chin. Phys. B
2007 Vol.16 (2): 529-532
[Abstract]
(1469)
[HTML 1 KB]
[PDF 147 KB]
(499)
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1879 |
Chen Wei-Bing(陈卫兵), Xu Jing-Ping(徐静平), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), Xu Sheng-Guo(许胜国), and Chan Chu-Lok(陈铸略) |
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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer |
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Chin. Phys. B
2006 Vol.15 (8): 1879-1882
[Abstract]
(1500)
[HTML 1 KB]
[PDF 381 KB]
(622)
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2153 |
Zhang Ai-Guo (张爱国), Wang Yin-Jun (王荫君), Han Xiu-Feng (韩秀峰), Zhan Wen-Shan (詹文山) |
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The effect of Pd doped in Ru layer on the interlayer coupling in Co/RuPd multilayers |
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Chin. Phys. B
2004 Vol.13 (12): 2153-2157
[Abstract]
(1025)
[HTML 1 KB]
[PDF 214 KB]
(493)
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183 |
Wang Hai (王海), Tang Yun-Jun (唐云俊), Li Xiang (李祥), Chen Xi (陈熹), Wang Yin-Jun (王荫君), Zhu Tao (朱涛), Zhao Hong-Wu (赵宏武), Zhan Wen-Shan (詹文山) |
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Percolation-related magnetic coupling and magnetoresistance properties in Fe/Si1-xAgx multilayers |
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Chin. Phys. B
2002 Vol.11 (2): 183-187
[Abstract]
(1055)
[HTML 1 KB]
[PDF 222 KB]
(501)
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