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Preparation and characterization of thick cubic boron nitride films |
Wang Ming-E (王明娥)a b, Ma Guo-Jia (马国佳)a b, Dong Chuang (董闯)a, Gong Shui-Li (巩水利)b |
a School of Material and Engineering, Dalian University of Technology, Dalian 116024, China; b National Key Laboratory of Science and Technology on Power Beam Processes, Beijing AeronauticalManufacturing Technology Research Institute, Beijing 100024, China |
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Abstract Cubic boron nitride (c-BN) films are prepared by the radio frequency magnetron sputtering technique. The stresses and crystallinities of the films are estimated by the Fourier transform infrared spectroscopy of c-BN samples, including the peak shifts and varieties of full widths at half maximum. The effects of the B-C-N interlayer and the two-stage deposition method on the c-BN films are investigated. Then the thick and stable c-BN films are prepared by a combination of the two methods. The properties of the interlayer and film are also characterized.
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Received: 15 September 2013
Revised: 09 December 2013
Accepted manuscript online:
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PACS:
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68.55.A-
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(Nucleation and growth)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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68.35.B-
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(Structure of clean surfaces (and surface reconstruction))
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Corresponding Authors:
Dong Chuang
E-mail: dong@dlut.edu.cn
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Cite this article:
Wang Ming-E (王明娥), Ma Guo-Jia (马国佳), Dong Chuang (董闯), Gong Shui-Li (巩水利) Preparation and characterization of thick cubic boron nitride films 2014 Chin. Phys. B 23 066805
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