Other articles related with "InP":
68502 Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智)
  An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors
    Chin. Phys. B   2022 Vol.31 (6): 68502-068502 [Abstract] (369) [HTML 1 KB] [PDF 3148 KB] (69)
58506 Bo Wang(王博), Peng Ding(丁芃), Rui-Ze Feng(封瑞泽), Shu-Rui Cao(曹书睿), Hao-Miao Wei(魏浩淼), Tong Liu(刘桐), Xiao-Yu Liu(刘晓宇), Hai-Ou Li(李海鸥), and Zhi Jin(金智)
  Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process
    Chin. Phys. B   2022 Vol.31 (5): 58506-058506 [Abstract] (352) [HTML 1 KB] [PDF 1783 KB] (66)
58502 Shurui Cao(曹书睿), Ruize Feng(封瑞泽), Bo Wang(王博), Tong Liu(刘桐), Peng Ding(丁芃), and Zhi Jin(金智)
  Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs
    Chin. Phys. B   2022 Vol.31 (5): 58502-058502 [Abstract] (351) [HTML 1 KB] [PDF 1749 KB] (127)
47303 Shi-Yu Feng(冯识谕), Yong-Bo Su(苏永波), Peng Ding(丁芃), Jing-Tao Zhou(周静涛), Song-Ang Peng(彭松昂), Wu-Chang Ding(丁武昌), and Zhi Jin(金智)
  Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation
    Chin. Phys. B   2022 Vol.31 (4): 47303-047303 [Abstract] (371) [HTML 1 KB] [PDF 3009 KB] (170)
18505 Ruize Feng(封瑞泽), Bo Wang(王博), Shurui Cao(曹书睿), Tong Liu(刘桐), Yongbo Su(苏永波), Wuchang Ding(丁武昌), Peng Ding(丁芃), and Zhi Jin(金智)
  Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs
    Chin. Phys. B   2022 Vol.31 (1): 18505-018505 [Abstract] (420) [HTML 1 KB] [PDF 1023 KB] (147)
18502 Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智)
  Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology
    Chin. Phys. B   2022 Vol.31 (1): 18502-018502 [Abstract] (454) [HTML 0 KB] [PDF 1384 KB] (54)
120701 Huali Zhu(朱华利), Yong Zhang(张勇), Kun Qu(屈坤), Haomiao Wei(魏浩淼), Yukun Li(黎雨坤), Yuehang Xu(徐跃杭), and Ruimin Xu(徐锐敏)
  A terahertz on-chip InP-based power combiner designed using coupled-grounded coplanar waveguide lines
    Chin. Phys. B   2021 Vol.30 (12): 120701-120701 [Abstract] (382) [HTML 0 KB] [PDF 844 KB] (64)
120507 Xiao-Yu Shen(沈小宇), Shuai Su(宿帅), and Hai-Liang Hou(侯海良)
  Distributed optimization for discrete-time multiagent systems with nonconvex control input constraints and switching topologies
    Chin. Phys. B   2021 Vol.30 (12): 120507-120507 [Abstract] (362) [HTML 0 KB] [PDF 791 KB] (99)
70702 Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智)
  A comparative study on radiation reliability of composite channel InP high electron mobility transistors
    Chin. Phys. B   2021 Vol.30 (7): 70702-070702 [Abstract] (446) [HTML 1 KB] [PDF 1188 KB] (156)
18106 Yan Wang(王岩), Shuai Luo(罗帅), Haiming Ji(季海铭), Di Qu(曲迪), and Yidong Huang(黄翊东)
  Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition
    Chin. Phys. B   2021 Vol.30 (1): 18106- [Abstract] (409) [HTML 1 KB] [PDF 2142 KB] (68)
18501 Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智)
  Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs
    Chin. Phys. B   2021 Vol.30 (1): 18501- [Abstract] (380) [HTML 1 KB] [PDF 2201 KB] (143)
38502 Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超)
  Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane
    Chin. Phys. B   2020 Vol.29 (3): 38502-038502 [Abstract] (529) [HTML 1 KB] [PDF 714 KB] (141)
78501 Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超)
  Effect of defects properties on InP-based high electron mobility transistors
    Chin. Phys. B   2019 Vol.28 (7): 78501-078501 [Abstract] (663) [HTML 1 KB] [PDF 1176 KB] (193)
30602 Zhaoxue Li(李兆雪), Jiangdong Qiu(邱疆冬), Linguo Xie(谢林果), Lan Luo(罗兰), Xiong Liu(刘雄), Zhiyou Zhang(张志友), Changliang Ren(任昌亮), JingLei Du(杜惊雷)
  Pre- and post-selected measurements with coupling-strength-dependent modulation
    Chin. Phys. B   2019 Vol.28 (3): 30602-030602 [Abstract] (719) [HTML 1 KB] [PDF 521 KB] (146)
47101 Jin-Lun Li(李金伦), Shao-Hui Cui(崔少辉), Jian-Xing Xu(徐建星), Xiao-Ran Cui(崔晓然), Chun-Yan Guo(郭春妍), Ben Ma(马奔), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)
  Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector
    Chin. Phys. B   2018 Vol.27 (4): 47101-047101 [Abstract] (736) [HTML 1 KB] [PDF 1343 KB] (275)
28502 Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智)
  Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
    Chin. Phys. B   2018 Vol.27 (2): 28502-028502 [Abstract] (597) [HTML 0 KB] [PDF 1730 KB] (271)
120701 Yu-Jiao Huang(黄玉娇), Xiao-Yan Wang(汪晓妍), Hai-Xia Long(龙海霞), Xu-Hua Yang(杨旭华)
  Synthesization of high-capacity auto-associative memories using complex-valued neural networks
    Chin. Phys. B   2016 Vol.25 (12): 120701-120701 [Abstract] (699) [HTML 1 KB] [PDF 718 KB] (184)
118106 Yan-Kun Yang(杨燕琨), Tie-Feng Yang(杨铁锋), Hong-Lai Li(李洪来), Zhao-Yang Qi(祁朝阳), Xin-Liang Chen(陈新亮), Wen-Qiang Wu(吴文强), Xue-Lu Hu(胡学鹿), Peng-Bin He(贺鹏斌), Ying Jiang(蒋英), Wei Hu(胡伟), Qing-Lin Zhang(张清林), Xiu-Juan Zhuang(庄秀娟), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练)
  High performance photodetectors based on high quality InP nanowires
    Chin. Phys. B   2016 Vol.25 (11): 118106-118106 [Abstract] (832) [HTML 1 KB] [PDF 1003 KB] (400)
108501 Shu-Xiang Sun(孙树祥), Hui-Fang Ji(吉慧芳), Hui-Juan Yao(姚会娟), Sheng Li(李胜), Zhi Jin(金智), Peng Ding(丁芃), Ying-Hui Zhong(钟英辉)
  Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
    Chin. Phys. B   2016 Vol.25 (10): 108501-108501 [Abstract] (709) [HTML 1 KB] [PDF 416 KB] (798)
96801 Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀)
  Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures
    Chin. Phys. B   2016 Vol.25 (9): 96801-096801 [Abstract] (628) [HTML 1 KB] [PDF 303 KB] (374)
66301 Guan-Nan Wei(魏冠男), Qing-Hai Tan(谭青海), Xing Dai(戴兴), Qi Feng(冯琦), Wen-Gang Luo(骆文刚), Yu Sheng(盛宇), Kai Wang(王凯), Wen-Wu Pan(潘文武), Li-Yao Zhang(张立瑶), Shu-Min Wang(王庶民), Kai-You Wang(王开友)
  Bismuth-content-dependent polarized Raman spectrum of InPBi alloy
    Chin. Phys. B   2016 Vol.25 (6): 66301-066301 [Abstract] (646) [HTML 1 KB] [PDF 2257 KB] (322)
60504 Xiao-Meng Li(李晓蒙), Zhan-Shan Zhao(赵占山), Jing Zhang(张静), Lian-Kun Sun(孙连坤)
  H synchronization of the coronary artery system with input time-varying delay
    Chin. Phys. B   2016 Vol.25 (6): 60504-060504 [Abstract] (785) [HTML 1 KB] [PDF 11233 KB] (294)
50101 Yu Yang(杨瑜), Bing-Zhong Wang(王秉中), Shuai Ding(丁帅)
  Shannon information capacity of time reversal wideband multiple-input multiple-output system based on correlated statistical channels
    Chin. Phys. B   2016 Vol.25 (5): 50101-050101 [Abstract] (668) [HTML 1 KB] [PDF 435 KB] (393)
58401 Ou-Peng Li(李欧鹏), Yong Zhang(张勇), Rui-Min Xu(徐锐敏), Wei Cheng(程伟), Yuan Wang(王元), Bing Niu(牛斌), Hai-Yan Lu(陆海燕)
  A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
    Chin. Phys. B   2016 Vol.25 (5): 58401-058401 [Abstract] (743) [HTML 1 KB] [PDF 633 KB] (393)
110201 Wen Fang-Qing (文方青), Zhang Gong (张弓), Ben De (贲德)
  Direction-of-arrival estimation for co-located multiple-input multiple-output radar using structural sparsity Bayesian learning
    Chin. Phys. B   2015 Vol.24 (11): 110201-110201 [Abstract] (496) [HTML 1 KB] [PDF 313 KB] (311)
108802 Zheng Xin-He (郑新和), Liu San-Jie (刘三姐), Xia Yu (夏宇), Gan Xing-Yuan (甘兴源), Wang Hai-Xiao (王海啸), Wang Nai-Ming (王乃明), Yang Hui (杨辉)
  GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE
    Chin. Phys. B   2015 Vol.24 (10): 108802-108802 [Abstract] (627) [HTML 1 KB] [PDF 362 KB] (505)
30503 Luo Run-Zi (罗润梓), Zhang Chun-Hua (张春华)
  Observer of a class of chaotic systems: An application to Hindmarsh-Rose neuronal model
    Chin. Phys. B   2015 Vol.24 (3): 30503-030503 [Abstract] (682) [HTML 0 KB] [PDF 368 KB] (378)
10501 Gao Shi-Gen (高士根), Dong Hai-Rong (董海荣), Sun Xu-Bin (孙绪彬), Ning Bin (宁滨)
  Neural adaptive chaotic control with constrained input using state and output feedback
    Chin. Phys. B   2015 Vol.24 (1): 10501-010501 [Abstract] (557) [HTML 0 KB] [PDF 1711 KB] (458)
57204 Wu De-Qi (武德起), Ding Wu-Chang (丁武昌), Yang Shan-Shan (杨姗姗), Jia Rui (贾锐), Jin Zhi (金智), Liu Xin-Yu (刘新宇)
  High performance oscillator with 2-mW output power at 300 GHz
    Chin. Phys. B   2014 Vol.23 (5): 57204-057204 [Abstract] (701) [HTML 1 KB] [PDF 1002 KB] (443)
38501 Wang Li-Dan (汪丽丹), Ding Peng (丁芃), Su Yong-Bo (苏永波), Chen Jiao (陈娇), Zhang Bi-Chan (张毕禅), Jin Zhi (金智)
  100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz
    Chin. Phys. B   2014 Vol.23 (3): 38501-038501 [Abstract] (637) [HTML 1 KB] [PDF 1135 KB] (920)
17806 Yu Jin-Ling (俞金玲), Chen Yong-Hai (陈涌海), Lai Yun-Feng (赖云锋), Cheng Shu-Ying (程树英)
  Spin–orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells
    Chin. Phys. B   2014 Vol.23 (1): 17806-017806 [Abstract] (589) [HTML 1 KB] [PDF 359 KB] (426)
118503 Li Chong (李冲), Xue Chun-Lai (薛春来), Li Chuan-Bo (李传波), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明)
  High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector
    Chin. Phys. B   2013 Vol.22 (11): 118503-118503 [Abstract] (554) [HTML 1 KB] [PDF 295 KB] (1120)
87202 Bai Yang (白阳), Jia Rui (贾锐), Wu De-Qi (武德起), Jin Zhi (金智), Liu Xin-Yu (刘新宇), Lin Mei-Yu (林美玉)
  Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode
    Chin. Phys. B   2013 Vol.22 (8): 87202-087202 [Abstract] (571) [HTML 1 KB] [PDF 1022 KB] (700)
27202 Bai Yang (白阳), Jia Rui (贾锐), Wu De-Qi (武德起), Jin Zhi (金智), Liu Xin-Yu (刘新宇 )
  The design and manufacture of a notch structure for a planar InP Gunn diode
    Chin. Phys. B   2013 Vol.22 (2): 27202-027202 [Abstract] (734) [HTML 1 KB] [PDF 495 KB] (987)
118701 Song Xiao-Na (宋晓娜), Fu Zhu-Mu (付主木), Liu Lei-Po (刘磊坡 )
  Robust stabilization of state delayed discrete-time Takagi–Sugeno fuzzy systems with input saturation via anti-windup fuzzy design
    Chin. Phys. B   2012 Vol.21 (11): 118701-118701 [Abstract] (1160) [HTML 1 KB] [PDF 155 KB] (550)
97502 Dong Shan (董珊), Zhu Feng (朱峰)
  Electron-mediated ferromagnetism in Fe-doped InP: Theory and experiment
    Chin. Phys. B   2012 Vol.21 (9): 97502-097502 [Abstract] (1255) [HTML 1 KB] [PDF 326 KB] (973)
60506 Mohammad Pourmahmood Aghababa and Hassan Feizi
  Nonsingular terminal sliding mode approach applied to synchronize chaotic systems with unknown parameters and nonlinear inputs
    Chin. Phys. B   2012 Vol.21 (6): 60506-060506 [Abstract] (1390) [HTML 1 KB] [PDF 318 KB] (1140)
58501 Ge Ji(葛霁), Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智)
  Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors
    Chin. Phys. B   2012 Vol.21 (5): 58501-058501 [Abstract] (1439) [HTML 1 KB] [PDF 187 KB] (1031)
30503 Niu Yu-Jun(牛玉军), Wang Xing-Yuan(王兴元), and Pei Bing-Nan(裴炳南)
  Adaptive projective synchronization of different chaotic systems with nonlinearity inputs
    Chin. Phys. B   2012 Vol.21 (3): 30503-030503 [Abstract] (1041) [HTML 1 KB] [PDF 452 KB] (621)
90505 Mohammad Pourmahmood Aghababa
  A novel adaptive finite-time controller for synchronizing chaotic gyros with nonlinear inputs
    Chin. Phys. B   2011 Vol.20 (9): 90505-090505 [Abstract] (1351) [HTML 0 KB] [PDF 242 KB] (1810)
87203 Chen Yi-Xin(陈依新), Shen Guang-Di(沈光地), Guo Wei-Ling(郭伟玲), and Gao Zhi-Yuan(高志远)
  AlGaInP–Si glue bonded high performance light emitting diodes
    Chin. Phys. B   2011 Vol.20 (8): 87203-087203 [Abstract] (1466) [HTML 0 KB] [PDF 726 KB] (1314)
120703 Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌)
  Total ionizing dose effect in an input/output device for flash memory
    Chin. Phys. B   2011 Vol.20 (12): 120703-120703 [Abstract] (1565) [HTML 1 KB] [PDF 303 KB] (744)
17204 Chen Yi-Xin(陈依新),Shen Guang-Di(沈光地),Guo Wei-Ling(郭伟玲), Xu Chen(徐晨), and Li Jian-Jun(李建军)
  Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)
    Chin. Phys. B   2011 Vol.20 (1): 17204-017204 [Abstract] (1710) [HTML 0 KB] [PDF 651 KB] (1397)
77304 Gu Yi(顾溢), Wang Kai(王凯), Li Yao-Yao(李耀耀), Li Cheng(李成), and Zhang Yong-Gang(张永刚)
  InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm
    Chin. Phys. B   2010 Vol.19 (7): 77304-077304 [Abstract] (1540) [HTML 1 KB] [PDF 1229 KB] (902)
3498 Zhang Jian-Ming(张剑铭), Zou De-Shu(邹德恕), Xu Chen(徐晨), Guo Wei-Ling(郭伟玲), Zhu Yan-Xu(朱彦旭), Liang Ting(梁庭), Da Xiao-Li(达小丽), Li Jian-Jun(李建军), and Shen Guang-Di(沈光地)
  AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact
    Chin. Phys. B   2007 Vol.16 (11): 3498-3501 [Abstract] (1709) [HTML 1 KB] [PDF 1082 KB] (1247)
2125 Wang Jun(王俊), Ma Xiao-Yu(马骁宇), Bai Yi-Ming(白一鸣), Cao Li(曹力), and Wu Da-Jin(吴大进)
  Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes
    Chin. Phys. B   2006 Vol.15 (9): 2125-2129 [Abstract] (1092) [HTML 1 KB] [PDF 140 KB] (490)
1335 Zhang Yang (张杨), Zeng Yi-Ping (曾一平), Ma Long (马龙), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平), Wang Liang-Chen (王良臣), Yang Fu-Hua (杨富华)
  Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
    Chin. Phys. B   2006 Vol.15 (6): 1335-1338 [Abstract] (1679) [HTML 0 KB] [PDF 308 KB] (820)
1190 Gao Tie-Gang (高铁杠), Chen Zeng-Qiang (陈增强), Chen Guan-Rong (陈关荣), Yuan Zhu-Zhi (袁著祉)
  Finite-time control of chaotic systems with nonlinear inputs
    Chin. Phys. B   2006 Vol.15 (6): 1190-1195 [Abstract] (1591) [HTML 1 KB] [PDF 257 KB] (600)
953 Zhang Jian (张 健), Xu Hong-Bing (徐红兵), Wang Hou-Jun (王厚军)
  Adaptive synchronization of Chua's system with uncertain inputs
    Chin. Phys. B   2006 Vol.15 (5): 953-957 [Abstract] (1487) [HTML 0 KB] [PDF 237 KB] (597)
2481 Du Zheng-Cong(杜正聪), Tang Bin(唐斌), and Liu Li-Xin(刘立新)
  A new layered space--time detection algorithm for frequency selective fading multiple-input multiple-output channels based on particle filter
    Chin. Phys. B   2006 Vol.15 (11): 2481-2488 [Abstract] (1474) [HTML 1 KB] [PDF 175 KB] (535)
1591 Wu Jian-Rong (吴健荣)
  Reduced-order observer of singular system with unknown inputs
    Chin. Phys. B   2004 Vol.13 (10): 1591-1596 [Abstract] (1006) [HTML 0 KB] [PDF 148 KB] (606)
594 Zhang Sheng (张胜), Liu Hong-Xing (刘红星), Gao Dun-Tang (高敦堂), Du Si-Dan (都思丹)
  Determining the input dimension of a neural network for nonlinear time series prediction
    Chin. Phys. B   2003 Vol.12 (6): 594-598 [Abstract] (1357) [HTML 1 KB] [PDF 212 KB] (580)
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