InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm

doi:10.1088/1674-1056/19/7/077304

Abstract The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/In_0.53Ga_0.47As digital alloy triangular well layers and tensile In_0.53Ga_0.47As/InAlGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photoluminescence (PL) and electroluminescence (EL) measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1 μ m at 300 K and an EL signal of around 1.95 μ m at 100 K have been obtained.

Keywords: InP-based digital alloy lasers strained materials

Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	78.67.De	(Quantum wells)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	68.55.-a	(Thin film structure and morphology)
	78.55.Cr	(III-V semiconductors)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876034) and the National Basic Research Program of China (Grant No. 2006CB604903).

Cite this article:

Gu Yi(顾溢), Wang Kai(王凯), Li Yao-Yao(李耀耀), Li Cheng(李成), and Zhang Yong-Gang(张永刚) InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm 2010 Chin. Phys. B 19 077304

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InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm

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