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Chin. Phys. B, 2026, Vol. 35(6): 068502    DOI: 10.1088/1674-1056/ae3233
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Strain-mediated voltage control of skyrmion transport in nanoracetracks

Hao-Yuan Wang(王灏元)1,2,†, Xue-Feng Zhang(张雪枫)1,2,†, Tian Qiu(邱添)1,3,†, Huiting Li(李慧婷)1,2, Xiao-Ping Ma(马晓萍)1,2,‡, Je-Ho Shim(沈帝虎)1,2, Xing-Ri Jin(金星日)1,2, and Hong-Guang Piao(朴红光)1,2,§
1 Department of Physics, College of Science, Yanbian University, Yanji 133002, China;
2 Institute of Quantum Science and Technology, Yanbian University, Yanji 133002, China;
3 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
Abstract  A voltage-gated scheme for controlling the transport of skyrmions in nanoracetracks is proposed using micromagnetic simulations. The scheme utilizes strain-mediated voltage control of magnetism to effectively modulate local magnetic parameters, including perpendicular magnetic anisotropy, exchange stiffness, the Dzyaloshinskii-Moriya interaction, and saturation magnetization. To understand the effect of voltage-controlled magnetism on skyrmion transport, the dynamic behavior of skyrmions was investigated by varying local magnetic parameters at different driving current densities, thereby revealing the underlying physical mechanism. The results demonstrate that skyrmion annihilation, trapping, blocking, and unblocking can be effectively controlled by coordinating the driving current with the local magnetic parameters. Our scheme offers a practical, low-power electrical control strategy for designing spintronic devices based on skyrmion dynamics.
Keywords:  spintronics      skyrmions      voltage-controlled magnetism      electrostriction  
Received:  30 September 2025      Revised:  30 December 2025      Accepted manuscript online:  31 December 2025
PACS:  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
  75.70.Kw (Domain structure (including magnetic bubbles and vortices))  
  72.25.-b (Spin polarized transport)  
  75.85.+t (Magnetoelectric effects, multiferroics)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12364020), the Scientific and Technological Development Plan of Jilin Province (Grant No. 20240101295JC), and the Applied Foundation Research Project (Talent Funding Project) of Yanbian University (Grant No. ydkj202241).
Corresponding Authors:  Xiao-Ping Ma, Hong-Guang Piao     E-mail:  xpma1222@ybu.edu.cn;hgpiao@ybu.edu.cn

Cite this article: 

Hao-Yuan Wang(王灏元), Xue-Feng Zhang(张雪枫), Tian Qiu(邱添), Huiting Li(李慧婷), Xiao-Ping Ma(马晓萍), Je-Ho Shim(沈帝虎), Xing-Ri Jin(金星日), and Hong-Guang Piao(朴红光) Strain-mediated voltage control of skyrmion transport in nanoracetracks 2026 Chin. Phys. B 35 068502

[1] Tokura Y and Kanazawa N 2020 Chem. Rev. 121 2857
[2] Bogdanov A N and Panagopoulos C 2020 Nat. Rev. Phys. 2 492
[3] Wang K, Huang Y, Zhang X, Zhou Y and Zhao W 2016 Proc. IEEE 104 2040
[4] Nagaosa N and Tokura Y 2013 Nat. Nanotechnol. 8 899
[5] Wang X S, Yuan H Y and Wang X R 2018 Commun. Phys. 1 31
[6] Göbel B, Mertig I and Tretiakov O A 2021 Phys. Rep. 895 1
[7] Tan A K C, Weigand M, Büttner F, Günther C M, Gräfe J, Eisebitt S and Beach G S D 2021 Nat. Commun. 12 4252
[8] Sampaio J, Cros V, Rohart S, Fert A and Thiaville A 2013 Nat. Nanotechnol. 8 839
[9] Komineas S and Papanicolaou N 2015 Phys. Rev. B 92 064412
[10] Hrabec A, Sampaio J, Belmeguenai M, Gross I, Weil R, Cherif S M, Stashkevich A, Jacques V, Thiaville A and Rohart S 2017 Nat. Commun. 8 15765
[11] Juge R, Je S G, de Souza Chaves D, et al. 2019 Phys. Rev. Appl. 12 044007
[12] Woo S, Song K M, Zhang X, Zhou Y, Ezawa M, Liu X, Finizio S, Raabe J, Lee N J, et al. 2018 Nat. Commun. 9 959
[13] Tang J, Wu Y, Wang W, Kong L, Lv B, Wei W, Zang J, Tian M and Du H 2021 Nat. Nanotechnol. 16 1086
[14] Ye C, Li L L, Shu Y, Li Q R, Xia J, Hou Z P, Zhou Y, Liu X X, Yang Y Y and Zhao G P 2022 Rare Met. 41 2200
[15] Tomasello R, Martinez E, Zivieri R, Torres L, CarpentieriMand Finocchio G 2014 Sci. Rep. 4 6784
[16] Wang K, Zheng C, Huang Y, Zhang X, Zhou Y and Lv W 2016 IEEE Electron Device Lett. 37 924
[17] Song K M, Jeong J S, Pan B, Zhang X, Xia J, Cha S, Park J E, Kim K, Finizio S, et al. 2020 Nat. Electron. 3 148
[18] Luo S, Song M, Li X, Zhang Y, Hong J, Yang X, Zou X, Xu N and You L 2018 Nano Lett. 18 1180
[19] Zhang X, Ezawa M and Zhou Y 2015 Sci. Rep. 5 9400
[20] Fert A, Reyren N and Cros V 2017 Nat. Rev. Mater. 2 17031
[21] Finocchio G, Büttner F, Tomasello R, Carpentieri M and Kläui M 2016 J. Phys. D: Appl. Phys. 49 423001
[22] Zhang S L,WangW, Burn D M, Peng H, Berger H, Bauer A, Pfleiderer C, van der Laan G and Hesjedal T 2018 Nat. Commun. 9 2115
[23] Xia H, Song C, Jin C,Wang J,Wang J and Liu Q 2018 J. Magn. Magn. Mater. 458 57
[24] Gorshkov I O, Gorev R V, Sapozhnikov M V and Udalov O G 2022 ACS Appl. Electron. Mater. 4 3205
[25] Wang K, Bheemarasetty V, Duan J, Zhou S and Xiao G 2022 J. Magn. Magn. Mater. 563 169905
[26] Ma X P, Li H T, Zhang X F, Li C F, Shim J H and Piao H G 2025 Appl. Phys. Lett. 126 142401
[27] Mishra P K, Sravani M, Bose A and Bhuktare S 2024 J. Appl. Phys. 135 220701
[28] Nozaki T, Yamamoto T, Miwa S, Tsujikawa M, Shirai M, Yuasa S and Suzuki Y 2019 Micromachines 10 327
[29] Rana B and Otani Y 2019 Commun. Phys. 2 90
[30] Amiri P K and Wang K L 2012 Spin 2 1240002
[31] Bhattacharya D, Bandyopadhyay S and Atulasimha J 2019 Multifunct. Mater. 2 032001
[32] Zhang Y, Sun W, Cao K, et al. 2024 Sci. Adv. 10 eadl4633
[33] Chen A, Piao H G, Zhang C, Ma X P, Algaidi H, Ma Y, Li Y, Zheng D, Qiu Z and Zhang X X 2023 Mater. Horiz. 10 3034
[34] Chen A, Piao H G, Ji M, Fang B, Wen Y, Ma Y, Li P and Zhang X X 2021 Adv. Mater. 33 2105902
[35] Cho J, Miwa S, Yakushiji K, Kubota H, Fukushima A, You C Y, Yuasa S and Suzuki Y 2018 Phys. Rev. Appl. 10 014033
[36] Schott M, Ranno L, Béa H, Baraduc C, Auffret S and Bernand-Mantel A 2021 J. Magn. Magn. Mater. 520 167122
[37] Srivastava T, Schott M, Juge R, et al. 2018 Nano Lett. 18 4871
[38] Ba Y, Zhuang S, Zhang Y, et al. 2021 Nat. Commun. 12 322
[39] Franke K J A, Van deWiele B, Shirahata Y, Hämäläinen S J, Taniyama T and van Dijken S 2015 Phys. Rev. X 5 011010
[40] Xing X, Pong P W T and Zhou Y 2016 Phys. Rev. B 94 054408
[41] Tan F N, Gan W L, Ang C C I, Wong G D H, Liu H X, Poh F and Lew W S 2019 Sci. Rep. 9 7369
[42] Parkin S S P, Hayashi M and Thomas L 2008 Science 320 190
[43] Zhang X, Zhou Y, Ezawa M, Zhao G P and Zhao W 2015 Sci. Rep. 5 11369
[44] Paul S and Heinze S 2022 npj Comput. Mater. 8 105
[45] Wang K, Huang Y, Zheng C, Lv W, Lei N, Zhang Y, Zhang X, Zhou Y and Zhao W 2016 Sci. Rep. 6 23164
[46] Vansteenkiste A, Leliaert J, Dvornik M, Helsen M, Garcia-Sanchez F and Van Waeyenberge B 2014 AIP Adv. 4 107133
[47] Moreau-Luchaire C, Moutafis C, Reyren N, Sampaio J, Vaz C A F, Van Horne N, Bouzehouane K, Garcia K, Deranlot C, et al. 2016 Nat. Nanotechnol. 11 444
[48] Pham V T, Sisodia N, Di Manici I, Urrestarazu-Larrañnaga J, Bairagi K, Pelloux-Prayer J, Guedas R, Buda-Prejbeanu L D, Auffret S, Locatelli A, et al. 2024 Science 384 307
[49] Luo J, Xia J, Liang X, Zhou Y, Li L L, Gu L and Zhao G 2024 Phys. Rev. B 110 214409
[50] Schott M, Bernand-Mantel A, Ranno L, Pizzini S, Vogel J, Béa H, Baraduc C, Auffret S, Gaudin G and Givord D 2017 Nano Lett. 17 3006
[51] Fert A, Ramesh R, Garcia V, Casanova F and Bibes M 2024 Rev. Mod. Phys. 96 015005
[52] Iwasaki J, Mochizuki M and Nagaosa N 2013 Nat. Commun. 4 1463
[53] Iwasaki J, Mochizuki M and Nagaosa N 2013 Nat. Nanotechnol. 8 742
[54] Ai X L, Li H T, Zhang X F, Li C F, Shim J H, Ma X P and Piao H G 2024 Chin. Phys. B 33 107502
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