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Spin-orbit torque effect in silicon-based sputtered Mn3Sn film |
| Sha Lu(卢莎)1,†, Dequan Meng(孟德全)1,†, Adnan Khan1, Ziao Wang(王子傲)1, Shiwei Chen(陈是位)1,2,‡, and Shiheng Liang(梁世恒)1,2,§ |
1 School of Physics, Hubei University, Wuhan 430062, China;
2 Key Laboratory for Intelligent Sensing System and Security of Ministry of Education, Wuhan 430062, China |
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Abstract Noncollinear antiferromagnet Mn$_{3}$Sn has shown remarkable efficiency in charge-spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin-orbit torque. Current research has primarily focused on the spin-orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn$_{3}$Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn$_{3}$Sn films and Mn$_{3}$Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates. The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin-orbit torque effect generated by in-plane polarized spin currents existed in the Mn$_{3}$Sn/Py heterostructure, with a spin-orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn$_{3}$Sn/CoTb heterostructure based on amorphous Mn$_{3}$Sn film, where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9$\times10^{7}$ A/cm$^{2})$ compared to Ta/CoTb heterostructure. This research reveals the spin-orbit torque effect of amorphous Mn$_{3}$Sn films and establishes a foundation for further advancement in the practical application of Mn$_{3}$Sn materials in spintronic devices.
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Received: 28 April 2024
Revised: 26 June 2024
Accepted manuscript online: 09 July 2024
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PACS:
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75.30.Gw
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(Magnetic anisotropy)
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75.50.Ee
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(Antiferromagnetics)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFE0103300), the National Natural Science Foundation of China (Grant No. 12274119), the Natural Science Foundation of Hubei Province (Grant No. 2022CFA088), and the Open Research Fund of Songshan Lake Materials Laboratory (Grant No. 2022SLABFN04). |
Corresponding Authors:
Shiwei Chen, Shiheng Liang
E-mail: chenshw@hubu.edu.cn;shihengliang@hubu.edu.cn
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Cite this article:
Sha Lu(卢莎), Dequan Meng(孟德全), Adnan Khan, Ziao Wang(王子傲), Shiwei Chen(陈是位), and Shiheng Liang(梁世恒) Spin-orbit torque effect in silicon-based sputtered Mn3Sn film 2024 Chin. Phys. B 33 107501
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