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Photo-response enhancement in longitudinal porous GaN-based UV |
| Jing Li(李京)1,2, Shaolong Shi(师少龙)1, Yutong Chen(陈昱潼)4, Zhanhong Ma(马占红)5, Xia Li(李霞)1, Yang Liu(刘洋)1,2, and Tiangui Hu(胡天贵)1,2,3,† |
1 Yangtze Delta Region Institute (Quzhou), University of Electronic Science and Technology of China, Quzhou 324003, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 Deepcreatic Technologies Ltd., Chengdu 610000, China;
5 School of Electronic and Electrical Engineering, Ningxia University, Yinchuan 750021, China |
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Abstract Gallium nitride (GaN), as a typical wide bandgap semiconductor, is an excellent candidate to fabricate the high-performance UV photodetector, due to its excellent intrinsic nature. However, the weak light absorption of conventional bulk GaN limits the further improvement of photo-response of GaN-based photodetectors. Here, we have prepared a longitudinal porous GaN using a simple electrochemical etching process, and then fabricated a porous GaN-based photodetector (Porous PD). The photo-response in the Porous PD has been improved significantly compared to the control planar GaN-based photodetector (Planar PD). At $-1.2 $ V, the photo current ($I_{\rm photo}$) in the Porous PD is $\sim 75$ times higher than that of Planar PD, and the maximum responsivity of the Porous PD can reach $3.11\times10^{4}$ A/W, which is attributed to the large internal gain ($>1.06\times10^{5}$). The maximum specific detectivity of the Porous PD has also been calculated to be $5.22\times10^{13}$ Jones, two orders of magnitude higher than that of the Planar PD. Our work paves the way to develop high-performance GaN-based PDs for detecting weak optical signals.
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Received: 04 June 2025
Revised: 25 August 2025
Accepted manuscript online: 28 August 2025
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PACS:
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85.60.-q
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(Optoelectronic devices)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the Joint Fund of the Zhejiang Provincial Natural Science Foundation of China (Grant No. LQZQN25F050001), the Fund from the Municipal Government of Quzhou City, China (Grant Nos. 2023D021, 2024D014, and 2023D031), the National Natural Science Foundation of China (Grant No. 62472322), and the Central Leading Local Science and Technology Development Fund Project (Grant No. 2024FRD05005). |
Corresponding Authors:
Tiangui Hu
E-mail: tghu@csj.uestc.edu.cn
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Cite this article:
Jing Li(李京), Shaolong Shi(师少龙), Yutong Chen(陈昱潼), Zhanhong Ma(马占红), Xia Li(李霞), Yang Liu(刘洋), and Tiangui Hu(胡天贵) Photo-response enhancement in longitudinal porous GaN-based UV 2026 Chin. Phys. B 35 048503
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