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Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure |
| Pengfei Shao(邵鹏飞)1, Yifan Cheng (成毅凡)1, Yu Liu(柳裕)1, Qi Yao(姚齐)1, Zanjiang Qiao(乔赞江)1, Yanghu Peng (彭扬虎)1, Qin Cai(蔡青)1, Tao Tao(陶涛)1, Zili Xie(谢自力)1, Dunjun Chen(陈敦军)1, Bin Liu(刘斌)1, Rong Zhang(张荣)1,2, and Ke Wang(王科)1,† |
1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications, Xiamen University, Xiamen 361005, China |
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Abstract Polarization-induced two-dimensional hole gases (2DHG) in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors. This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD simulations. It is demonstrated that the p-channel is composed of holes both in the p-GaN layer and in the 2DHG at the GaN/AlGaN heterointerface at 300 K, whereas at 77 K, the p-channel conduction is dominated solely by the 2DHG at the GaN/AlGaN heterointerface. The results also reveal the formation of a polarization-induced 2DHG at the GaN/AlGaN interface, exhibiting a high sheet density of 2.2×1013 cm-2 and a mobility of 16.2 cm2·V-1·s-1 at 300 K. The 2DHG sheet density remains nearly independent of p-GaN thickness when the p-GaN layer exceeds 30 nm. However, for p-GaN layers thinner than 30 nm, the 2DHG sheet density strongly depends on the p-GaN thickness, which is attributed to the gradual extension of the depletion region toward the GaN/AlGaN interface under the influence of surface trap states.
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Received: 03 June 2025
Revised: 05 August 2025
Accepted manuscript online: 05 September 2025
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PACS:
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73.61.Ey
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(III-V semiconductors)
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| Fund: This work was supported by the National Key Research and Development Program of China (Grant No. 2024YFE0205000), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20243037), the National Natural Science Foundation of China (Grant Nos. 62074077 and 61921005), the Postdoctoral Fellowship Program of CPSF (Grant No. GZC20231098), and the Collaborative Innovation Center of Solid State Lighting and Energy- Saving Electronics. |
Corresponding Authors:
Ke Wang
E-mail: kewang@nju.edu.cn
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Cite this article:
Pengfei Shao(邵鹏飞), Yifan Cheng (成毅凡), Yu Liu(柳裕), Qi Yao(姚齐), Zanjiang Qiao(乔赞江), Yanghu Peng (彭扬虎), Qin Cai(蔡青), Tao Tao(陶涛), Zili Xie(谢自力), Dunjun Chen(陈敦军), Bin Liu(刘斌), Rong Zhang(张荣), and Ke Wang(王科) Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure 2025 Chin. Phys. B 34 117301
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