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β-Ga2O3/BP heterojunction for deep ultraviolet and infrared narrowband dual-band photodetection |
| Zhichao Chen(陈志超)1, Feng Ji(季枫)1, Yadan Li(李亚丹)1, Yahan Wang(王雅涵)1, Xuehao Ge(葛薛豪)1, Kai Jiang(姜凯)1, Hai Zhu(朱海)2, and Xianghu Wang(王相虎)1 |
1 College of Arts and Sciences, Shanghai Dianji University, Shanghai 200240, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China |
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Abstract The development of high-performance dual-band photodetectors (PDs) capable of simultaneous deep ultraviolet (DUV) and infrared (IR) detection is critical for advanced optoelectronic applications, particularly in missile warning and target identification systems. Conventional UV/IR PDs often suffer from UV (320-400~nm) noise interference and limited responsivity due to the use of narrow-bandgap semiconductors and self-powered operation modes. To address these challenges, high-quality $\beta$-Ga$_{2}$O$_{3}$ thin films were epitaxially grown on c-plane sapphire via metalorganic chemical vapor deposition (MOCVD), exhibiting excellent crystallinity and surface morphology. Unlike conventional heterojunctions ($\beta$-Ga$_{2}$O$_{3}$/graphene or $\beta$-Ga$_{2}$O$_{3}$/TMDs), the $\beta$-Ga$_{2}$O$_{3}$/BP structure leverages BP's tunable bandgap and high carrier mobility while maintaining strong type-II band alignment, thereby facilitating efficient charge separation under both UV and IR illumination. We present a high-sensitivity dual-band PD based on a $\beta$-Ga$_{2}$O$_{3}$/black phosphorus (BP) pn heterojunction. The ultrawide bandgap of $\beta$-Ga$_{2}$O$_{3}$ enables selective detection of DUV light while effectively suppressing interference from long-wave ultraviolet (UVA, 320-400 nm), whereas BP provides a layer-dependent infrared (IR) response. Photocurrent analysis reveals distinct carrier transport mechanisms, with electrons dominating under UV illumination and holes contributing predominantly under IR exposure. A systematic investigation of the bias-dependent photoresponse demonstrates that the responsivity increases significantly at higher voltages. Under a 7 V bias, the device exhibits a high responsivity of $4.63 \times 10^{-2}$ $\rm{mA/W}$ at 254 nm and $2.35 \times 10^{-3}$ $\rm{mA/W}$ at 850 nm. This work not only provides a viable strategy for developing high-performance dual-band PDs but also advances the understanding of heterojunction-based optoelectronic devices for military and sensing applications.
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Received: 12 May 2025
Revised: 26 June 2025
Accepted manuscript online: 02 July 2025
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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42.79.Pw
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(Imaging detectors and sensors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. U22A2073). |
Corresponding Authors:
Kai Jiang, Hai Zhu, Xianghu Wang
E-mail: 32077@sdju.edu.cn;zhuhai5@mail.sysu.edu.cn;wangxh@sdju.edu.cn
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Cite this article:
Zhichao Chen(陈志超), Feng Ji(季枫), Yadan Li(李亚丹), Yahan Wang(王雅涵), Xuehao Ge(葛薛豪), Kai Jiang(姜凯), Hai Zhu(朱海), and Xianghu Wang(王相虎) β-Ga2O3/BP heterojunction for deep ultraviolet and infrared narrowband dual-band photodetection 2025 Chin. Phys. B 34 128501
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