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Epitaxial growth of Bi nanowires on Pb-√77 × √3 surface |
| Siyu Huo(霍思宇)1,2,†, Jieying Li(李洁莹)1,2,†, Yuzhou Liu(刘宇舟)1,2, Desheng Cai(蔡德胜)1,2, Yitong Gu(谷易通)1,2, Haoen Chi(迟浩恩)1,2, Wenhui Pang(庞文慧)1,2, Gan Yu(于淦)1,2, Xiaoying Shi(史晓影)1,2, Wenguang Zhu(朱文光)1,2,3,‡, and Shengyong Qin(秦胜勇)1,2,3,§ |
1 International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei 230026, China;
2 CAS (Chinese Academy of Sciences) Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei 230026, China;
3 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China |
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Abstract Confining particles in one-dimensional (1D) systems profoundly modifies their electronic behaviors, which have been extensively demonstrated in carbon nanotubes and atomic chains. Structural instabilities and electron localizations often dominate the conductivity of 1D nanowires. Here, we successfully grew Bi single nanowires and nanowire arrays on Pb-$\sqrt 7 \times\sqrt 3 $ substrates via molecular beam epitaxy, both of which exhibit metallic behavior. Using scanning tunneling microscopy and first-principles density functional theory calculations, the interwire coupling and the correlation between nanowire bundles and electronic properties are investigated. A characteristic peak at 0.75 eV is observed on single wires and wire bundles of up to four nanowires, whereas interwire coupling weakens it and makes it disappear for wire bundles of five and above. These findings illustrate that the interwire coupling plays a critical role in the electronic structure of the 1D system, which provides insights for the design of nano-electronics materials.
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Received: 15 April 2025
Revised: 29 May 2025
Accepted manuscript online: 30 May 2025
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PACS:
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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73.21.-b
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(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12374196, 92165201, and 11634011), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302800), the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-046), the Fundamental Research Funds for the Central Universities (Grant Nos. WK3510000006 and WK3430000003), and the Initiative Project in Quantum Information Technologies of Anhui Province, China (Grant No. AHY170000). |
Corresponding Authors:
Wenguang Zhu, Shengyong Qin
E-mail: wgzhu@ustc.edu.cn;syqin@ustc.edu.cn
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Cite this article:
Siyu Huo(霍思宇), Jieying Li(李洁莹), Yuzhou Liu(刘宇舟), Desheng Cai(蔡德胜), Yitong Gu(谷易通), Haoen Chi(迟浩恩), Wenhui Pang(庞文慧), Gan Yu(于淦), Xiaoying Shi(史晓影), Wenguang Zhu(朱文光), and Shengyong Qin(秦胜勇) Epitaxial growth of Bi nanowires on Pb-√77 × √3 surface 2025 Chin. Phys. B 34 106801
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