Perspectives of spin-valley locking devices

doi:10.1088/1674-1056/acc809

Abstract Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information. However, it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys. Spin-valley locking refers to the coupling between spin and valley degrees of freedom in the materials with large spin-orbit coupling (SOC) and enables the manipulation of valleys indirectly through controlling spins. Here, we review the recent advances in spin-valley locking physics and outline possible device implications. In particular, we focus on the spin-valley locking induced by SOC and external electric field in certain two-dimensional materials with inversion symmetry and demonstrate the intriguing switchable valley-spin polarization, which can be utilized to design the promising electronic devices, namely, valley-spin valves and logic gates.

Keywords: spin-valley locking spintronics valleytronics spin-orbit coupling

Received: 16 February 2023
Revised: 16 March 2023
Accepted manuscript online: 28 March 2023

PACS:	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
	71.70.Ej	(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
	73.63.-b	(Electronic transport in nanoscale materials and structures)

Fund: This work is supported by the Fundamental Research Funds for the Central Universities (Grant No. FRFCU5710053421) and the National Natural Science Foundation of China (Grant No. 12274102).

Corresponding Authors: Lingling Tao
E-mail: lltao@hit.edu.cn

Cite this article:

Lingling Tao(陶玲玲) Perspectives of spin-valley locking devices 2023 Chin. Phys. B 32 107306

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