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Chin. Phys. B, 2024, Vol. 33(1): 018502    DOI: 10.1088/1674-1056/ad0714
Special Issue: SPECIAL TOPIC — Valleytronics
SPECIAL TOPIC—Valleytronics Prev   Next  

Valleytronic topological filters in silicene-like inner-edge systems

Hang Xie(谢航)1,2, Xiao-Long Lü(吕小龙)3,†, and Jia-En Yang(杨加恩)1,4,‡
1 College of Physics, Chongqing University, Chongqing 401331, China;
2 Chongqing Key Laboratory for Strongly-Coupled Physics, Chongqing University, Chongqing 401331, China;
3 College of Science, Guangxi University of Science and Technology, Liuzhou 545006, China;
4 School of Electronics and IoT, Chongqing College of Electronic Engineering, Chongqing 401331, China
Abstract  Inner edge state with spin and valley degrees of freedom is a promising candidate for designing a dissipationless device due to the topological protection. The central challenge for the application of the inner edge state is to generate and modulate the polarized currents. In this work, we discover a new mechanism to generate fully valley- and spin—valley-polarized current caused by the Bloch wavevector mismatch (BWM). Based on this mechanism, we design some serial-typed inner-edge filters. By using once of the BWM, the coincident states could be divided into transmitted and reflected modes, which can serve as a valley or spin—valley filter. In particular, while with twice of the BWM, the incident current is absolutely reflected to support an off state with a specified valley and spin, which is different from the gap effect. These findings give rise to a new platform for designing valleytronics and spin-valleytronics.
Keywords:  topological insulator      inner-edge state      valley polarization      spin polarization      quantum transport  
Received:  29 June 2023      Revised:  26 October 2023      Accepted manuscript online:  26 October 2023
PACS:  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
  05.60.Gg (Quantum transport)  
  73.20.At (Surface states, band structure, electron density of states)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
Fund: This work is supported by the National Natural Science Foundation of China (Grant Nos. 12204073 and 12147102), the Scientific and Technological Research Program of Chongqing Municipal Education Commission (Grant No. KJQN202303105), the Specific Research Project of Guangxi for Research Bases and Talents (Grant No. 2022AC21077) and the Foundation of Guangxi University of Science and Technology (Grant No. 21Z52).
Corresponding Authors:  Xiao-Long Lü, Jia-En Yang     E-mail:  physicslxl@163.com;yangjiaen309@163.com

Cite this article: 

Hang Xie(谢航), Xiao-Long Lü(吕小龙), and Jia-En Yang(杨加恩) Valleytronic topological filters in silicene-like inner-edge systems 2024 Chin. Phys. B 33 018502

[1] Abergel D, Apalkov V, Berashevich J, Ziegler K and Chakraborty T 2010 Adv. Phys. 59 261
[2] Novoselov K S, Falko V I, Colombo L, Gellert P R, Schwab M G and Kim K 2012 Nature 490 192
[3] Fleurence A, Friedlein R, Ozaki T, Kawai H, Wang Y and Yamada-Takamura Y 2012 Phys. Rev. Lett. 108 245501
[4] Liu C C, Jiang H and Yao Y 2011 Phys. Rev. B 84 195430
[5] Liu C C, Feng W X and Yao Y G 2011 Phys. Rev. Lett. 107
[6] Cao T, Wang G, Han W, Ye H, Zhu C, Shi J, Niu Q, Tan P, Wang E and Liu B 2012 Nat. Commun. 3 887
[7] Park C 2019 Phys. Rev. Appl. 11 044033
[8] Schaibley J R, Yu H, Clark G, Rivera P, Ross J S, Seyler K L, Yao W and Xu X 2016 Nat. Rev. Mater. 1 16055
[9] Ezawa M 2012 Phys. Rev. Lett. 109 055502
[10] Jana K and Muralidharan B 2022 NPJ 2D Mater. Appl. 6 19
[11] Pan H, Li Z S, Liu C C, Zhu G B, Qiao Z H and Yao Y G 2014 Phys. Rev. Lett. 112 106802
[12] Settnes M, Power S R, Brandbyge M and Jauho A P 2016 Phys. Rev. Lett. 117 276801
[13] Sun Y, Zhao H, Yu Z-M and Pan H 2019 J. Appl. Phys. 125 123904
[14] Ezawa M 2015 J. Phys. Soc. Jpn. 84 121003
[15] Zhou T, Cheng S, Schleenvoigt M, Schüffelgen P, Jiang H, Yang Z and Žutić I 2021 Phys. Rev. Lett. 127 116402
[16] Ezawa M 2013 Phys. Rev. B 87 155415
[17] Lü X L, Xie H, Yang J E, Li R X, Du L, Chen H J and Zhang H S 2023 New J. Phys. 25 023016
[18] Xu Y and Jin G 2017 Phys. Rev. B 95 155425
[19] Yang J E, Lü X L, Zhang C X and Xie H 2020 New J. Phys. 22 053034
[20] Zhang C X, Lü X L and Xie H 2020 J. Phys. D:Appl. Phys. 53 195302
[21] Han Y, You S and Qiao Z 2022 Phys. Rev. B 105 155301
[22] Cheng S G, Zhou J, Jiang H and Sun Q F 2016 New J. Phys. 18 103024
[23] Cheng S G, Liu H W, Jiang H, Sun Q F and Xie X C 2018 Phys. Rev. Lett. 121 156801
[24] Jung J, Zhang F, Qiao Z H and MacDonald A H 2011 Phys. Rev. B 84 075418
[25] Wang Z B, Cheng S G, Liu X and Jiang H 2021 Nanotechnology 32 402001
[26] Gao F, Xue H, Yang Z, Lai K, Yu Y, Lin X, Chong Y, Shvets G and Zhang B 2018 Nat. Phys. 14 140
[27] Zhang L, Yang Y, He M, Wang H X, Yang Z, Li E, Gao F, Zhang B, Singh R and Jiang J H 2019 Laser Photonics Rev. 13 1900159
[28] Pan H, Li X, Zhang F and Yang S Y A 2015 Phys. Rev. B 92 041404
[29] Pournaghavi N, Esmaeilzadeh M, Ahmadi S and Farokhnezhad M 2016 Solid State Commun. 226 33
[30] Liang Q F, Wu L H and Hu X 2013 New J. Phys. 15 063031
[31] Yokoyama T 2013 Phys. Rev. B 87 241409
[32] Rashidian Z, Rezaeipour S, Hajati Y, Lorestaniweiss Z and Ueda A 2017 J. Magn. Magn. Mater. 424 207
[33] Hajati Y and Rashidian Z 2016 AIP Adv. 6 039901
[34] Oka T and Aoki H 2009 Phys. Rev. B 79 081406
[35] Zheng J, Xiang Y, Li C L, Yuan R Y, Chi F and Guo Y 2020 Phys. Rev. Appl. 14 034027
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