Bimodal growth of Fe islands on graphene

doi:10.1088/1674-1056/ad322f

Abstract Magnetic metals deposited on graphene hold the key to applications in spintronics. Here, we present the results of Fe islands grown on graphene/SiC(0001) by molecular beam epitaxy, which are investigated by scanning tunneling microscopy. The two types of islands distinguished by flat or round tops are revealed, indicating bimodal growth of Fe. The atomic structures on the top surfaces of flat islands are also clearly resolved. Our results may improve the understanding of the mechanisms of metals deposited on graphene and pave the way for future spintronic applications of Fe/graphene systems.

Keywords: graphene magnetism molecular beam epitaxy scanning tunneling microscopy

Received: 18 February 2024
Revised: 08 March 2024
Accepted manuscript online: 11 March 2024

PACS:	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	73.20.-r	(Electron states at surfaces and interfaces)

Fund: We thank the Ministry of Science and Technology of China (Grant Nos. 2019YFA0308600 and 2020YFA0309000), the National Natural Science Foundation of China (Grant Nos. 92365302, 92065201, 22325203, 92265105, 12074247, and 12174252), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000), and the Science and Technology Commission of Shanghai Municipality (Grant Nos. 2019SHZDZX01, 19JC1412701 and 20QA1405100) for financial support. We also acknowledge financial support from the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302500).

Corresponding Authors: Hao Zheng, Jin-Feng Jia
E-mail: haozheng1@sjtu.edu.cn;JfJia@sjtu.edu.cn

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Yi-Sheng Gu(顾翊晟), Qiao-Yan Yu(俞俏滟), Dang Liu(刘荡), Ji-Ce Sun(孙蓟策), Rui-Jun Xi(席瑞骏), Xing-Sen Chen(陈星森), Sha-Sha Xue(薛莎莎), Yi Zhang(章毅), Xian Du(杜宪), Xu-Hui Ning(宁旭辉), Hao Yang(杨浩), Dan-Dan Guan(管丹丹), Xiao-Xue Liu(刘晓雪), Liang Liu(刘亮), Yao-Yi Li(李耀义), Shi-Yong Wang(王世勇), Can-Hua Liu(刘灿华), Hao Zheng(郑浩), and Jin-Feng Jia(贾金锋) Bimodal growth of Fe islands on graphene 2024 Chin. Phys. B 33 068104

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