| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magnetic and electrical transport properties in GdAlSi and SmAlGe |
| Jing Gong(巩静)1,2, Huan Wang(王欢)1,2, Xiao-Ping Ma(马小平)1,2, Xiang-Yu Zeng(曾祥雨)1,2, Jun-Fa Lin(林浚发)1,2, Kun Han(韩坤)1,2, Yi-Ting Wang(王乙婷)1,2, and Tian-Long Xia(夏天龙)1,2,3,4,† |
1 Department of Physics, Renmin University of China, Beijing 100872, China;
2 Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
3 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China;
4 Laboratory for Neutron Scattering, Renmin University of China, Beijing 100872, China |
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Abstract We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals, which possess a LaPtSi-type structure (space group $I$4$_{1}md$). The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature ($T_{\rm N}$). For GdAlSi, a hysteresis loop is observed in the magnetization and magnetoresistance curves within the $ab$ plane when the magnetic field is applied below $T_{\rm N}$, which is around 32 K. Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe, confirming the occurrence of magnetic transitions. In addition, the extracted magnetic entropy at high temperatures is consistent with the theoretical value of $R$ln($2{J}+1$) for $J=7/2$ in Gd$^{3+}$ and $J=5/2$ in Sm$^{3+}$, respectively. SmAlGe also exhibits Schottky-like specific heat contributions. Additionally, both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.
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Received: 20 March 2024
Revised: 16 April 2024
Accepted manuscript online: 23 April 2024
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PACS:
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73.43.Qt
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(Magnetoresistance)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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75.60.Ej
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(Magnetization curves, hysteresis, Barkhausen and related effects)
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81.10.Fq
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(Growth from melts; zone melting and refining)
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| Fund: This work was supported by the National Natural Science Foundation of China (Grant No. 12074425), the National Key R&D Program of China (Grant No. 2019YFA0308602), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 23XNKJ22). |
Corresponding Authors:
Tian-Long Xia
E-mail: tlxia@ruc.edu.cn
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Cite this article:
Jing Gong(巩静), Huan Wang(王欢), Xiao-Ping Ma(马小平), Xiang-Yu Zeng(曾祥雨), Jun-Fa Lin(林浚发), Kun Han(韩坤), Yi-Ting Wang(王乙婷), and Tian-Long Xia(夏天龙) Magnetic and electrical transport properties in GdAlSi and SmAlGe 2024 Chin. Phys. B 33 077302
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