| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics |
| Weizhong Chen(陈伟中)1,2, Liuting Mou(牟柳亭)1,†, Haifeng Qin(秦海峰)1, Hongsheng Zhang(张红升)1, and Zhengsheng Han(韩郑生)2,3 |
1 College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
3 Department of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract A power MOSFET with integrated split gate and dummy gate (SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS. The split gate is surrounded by the source and shielded by the dummy gate. Consequently, the coupling area between the split gate and the drain electrode is reduced, thus the gate-to-drain charge ($Q_{\rm GD}$), reverse transfer capacitance ($C_{\rm RSS}$) and turn-off loss ($E_{\rm off}$) are significantly decreased. Moreover, the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide $t_{\rm ox}$, which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction, then the majority carriers are injected to the N-drift to attenuate the minority injection. Therefore, the reverse recovery charge ($Q_{\rm RR}$), time ($T_{\rm RR}$) and peak current ($I_{\rm RRM}$) are effectively reduced at the reverse freewheeling state. Additionally, the specific on-resistance ($R_{\rm on,sp}$) and breakdown voltage ($BV$) are also studied to evaluate the static properties of the proposed SD-MOS. The simulation results show that the $Q_{\rm GD}$ of 6 nC/cm$^{2}$, the $C_{\rm RSS}$ of 1.1 pF/cm$^{2}$ at the $V_{\rm DS}$ of 150 V, the $Q_{\rm RR}$ of 1.2 μC/cm$^{2}$ and the $R_{\rm on,sp}$ of 8.4 m$\Omega \cdot$cm$^{2}$ are obtained, thus the figures of merit (FOM) including $Q_{\rm GD} \times R_{\rm on,sp}$ of 50 nC$\cdot$m$\Omega $, $E_{\rm off} \times R_{\rm on,sp}$ of 0.59 mJ$\cdot$m$\Omega $ and the $Q_{\rm RR} \times R_{\rm on,sp}$ of 10.1 μC$\cdot$m$\Omega $ are achieved for the proposed SD-MOS.
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Received: 29 April 2022
Revised: 05 September 2022
Accepted manuscript online: 08 September 2022
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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51.50.+v
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(Electrical properties)
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| Fund: Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016) and the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550). |
Corresponding Authors:
Liuting Mou
E-mail: 1005205632@qq.com
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Cite this article:
Weizhong Chen(陈伟中), Liuting Mou(牟柳亭), Haifeng Qin(秦海峰), Hongsheng Zhang(张红升), and Zhengsheng Han(韩郑生) An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics 2023 Chin. Phys. B 32 067303
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